Part Details for SPD30N03S2L07GBTMA1 by Infineon Technologies AG
Overview of SPD30N03S2L07GBTMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPD30N03S2L07GBTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | SPD30N03 - OptlMOS, 30A, 30V, 0.0098ohm, N-Channel, Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 9257 |
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$0.5206 / $0.6125 | Buy Now |
Part Details for SPD30N03S2L07GBTMA1
SPD30N03S2L07GBTMA1 CAD Models
SPD30N03S2L07GBTMA1 Part Data Attributes:
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SPD30N03S2L07GBTMA1
Infineon Technologies AG
Buy Now
Datasheet
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SPD30N03S2L07GBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0098 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SPD30N03S2L07GBTMA1
This table gives cross-reference parts and alternative options found for SPD30N03S2L07GBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD30N03S2L07GBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR7821HR | Power Field-Effect Transistor, 30A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | SPD30N03S2L07GBTMA1 vs IRLR7821HR |
| TPH11003NL | Nch VDSS≤30V | Toshiba America Electronic Components | SPD30N03S2L07GBTMA1 vs TPH11003NL |
| IRFR3707Z | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | SPD30N03S2L07GBTMA1 vs IRFR3707Z |
| RJK03B7DPA-00-J5A | 30A, 30V, 0.0107ohm, N-CHANNEL, Si, POWER, MOSFET, HALOFEN AND LEAD FREE, WPAK(3F), 8 PIN | Renesas Electronics Corporation | SPD30N03S2L07GBTMA1 vs RJK03B7DPA-00-J5A |
| STL28NF3LL | 28A, 30V, 0.0095ohm, N-CHANNEL, Si, POWER, MOSFET, 5 X 5 MM, CHIP SCALE, POWERFLAT-5 | STMicroelectronics | SPD30N03S2L07GBTMA1 vs STL28NF3LL |