Part Details for SPD28N03L by Siemens
Overview of SPD28N03L by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for SPD28N03L
SPD28N03L CAD Models
SPD28N03L Part Data Attributes
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SPD28N03L
Siemens
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Datasheet
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SPD28N03L
Siemens
Power Field-Effect Transistor, 28A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 145 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 112 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SPD28N03L
This table gives cross-reference parts and alternative options found for SPD28N03L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD28N03L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SSP7N60A | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | SPD28N03L vs SSP7N60A |
FQPF34N20 | 17.5A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN | Rochester Electronics LLC | SPD28N03L vs FQPF34N20 |
IRF654B | 21A, 250V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | SPD28N03L vs IRF654B |
FQPF3N40 | 1.6A, 400V, 3.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN | Rochester Electronics LLC | SPD28N03L vs FQPF3N40 |
FQA24N50 | 24A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN | Rochester Electronics LLC | SPD28N03L vs FQA24N50 |
SSH7N90A | Power Field-Effect Transistor, 7A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | SPD28N03L vs SSH7N90A |
FQA24N50F | 24A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN | Rochester Electronics LLC | SPD28N03L vs FQA24N50F |
SSS5N90A | Power Field-Effect Transistor, 3A I(D), 900V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Samsung Semiconductor | SPD28N03L vs SSS5N90A |
FDP6035L | 58A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | SPD28N03L vs FDP6035L |
FQAF8N80 | 5.9A, 800V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN | Rochester Electronics LLC | SPD28N03L vs FQAF8N80 |