Datasheets
SPD08P06PG by: Infineon Technologies AG

Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3 PIN

Part Details for SPD08P06PG by Infineon Technologies AG

Overview of SPD08P06PG by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SPD08P06PG

Part # Distributor Description Stock Price Buy
Ameya Holding Limited -60V,-8.83A,P Channel Power MOSFET 1800
RFQ
ComSIT USA SIPMOS POWER-TRANSISTOR Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant Europe - 1450
RFQ

Part Details for SPD08P06PG

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SPD08P06PG Part Data Attributes:

SPD08P06PG Infineon Technologies AG
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SPD08P06PG Infineon Technologies AG Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, TO-252, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-252
Package Description ROHS COMPLIANT, TO-252, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 70 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8.8 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 35.2 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SPD08P06PG

This table gives cross-reference parts and alternative options found for SPD08P06PG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD08P06PG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPD08P06P Power Field-Effect Transistor, 8.83A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, TO-252, 3 PIN Infineon Technologies AG SPD08P06PG vs SPD08P06P
Part Number Description Manufacturer Compare
SPD08P05 Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Infineon Technologies AG SPD08P06PG vs SPD08P05
FQD7P06TF Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SPD08P06PG vs FQD7P06TF
SFW9Z24 Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, DPAK-2 Fairchild Semiconductor Corporation SPD08P06PG vs SFW9Z24
RFD8P05SM 8A, 50V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation SPD08P06PG vs RFD8P05SM
RFD8P06ESM9A 8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation SPD08P06PG vs RFD8P06ESM9A
SPB08P06P Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Siemens SPD08P06PG vs SPB08P06P
SFR2955 Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SPD08P06PG vs SFR2955
FQD7P06TM Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SPD08P06PG vs FQD7P06TM
RFD8P06ESM Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor SPD08P06PG vs RFD8P06ESM
SPD08P06P Power Field-Effect Transistor, 8.83A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, TO-252, 3 PIN Infineon Technologies AG SPD08P06PG vs SPD08P06P

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