Part Details for SPD08N10 by Siemens
Overview of SPD08N10 by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SPD08N10
SPD08N10 CAD Models
SPD08N10 Part Data Attributes
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SPD08N10
Siemens
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Datasheet
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SPD08N10
Siemens
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SIEMENS A G | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8.4 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SPD08N10
This table gives cross-reference parts and alternative options found for SPD08N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD08N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
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| 934045250118 | 57A, 55V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | NXP Semiconductors | SPD08N10 vs 934045250118 |
| IRFZ46ZS | Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | SPD08N10 vs IRFZ46ZS |
| SUB70N03-09P | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | SPD08N10 vs SUB70N03-09P |
| SPD09N05 | Power Field-Effect Transistor, 9A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN | Siemens | SPD08N10 vs SPD09N05 |
| SPD31N05 | Power Field-Effect Transistor, 31A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | SPD08N10 vs SPD31N05 |
| SPD28N05L | Power Field-Effect Transistor, 28A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | SPD08N10 vs SPD28N05L |
| SPD02N60C3 | 1.8A, 600V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 | Rochester Electronics LLC | SPD08N10 vs SPD02N60C3 |