Part Details for SPD02N80C3 by Infineon Technologies AG
Overview of SPD02N80C3 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPD02N80C3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TMOSP11238
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Rutronik | N-CH 800V 2A 2700mOhm TO252-3 RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Stock DE - 5000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.4496 / $0.5828 | Buy Now |
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Chip 1 Exchange | INSTOCK | 19627 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 800V 2A 3TO252 | 7893 |
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RFQ | |
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Sense Electronic Company Limited | TO-252 | 2158 |
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RFQ |
Part Details for SPD02N80C3
SPD02N80C3 CAD Models
SPD02N80C3 Part Data Attributes:
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SPD02N80C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPD02N80C3
Infineon Technologies AG
Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 2/3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-252AA | |
Package Description | GREEN, PLASTIC, TO-252, 2/3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 90 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 2.7 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 6 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SPD02N80C3
This table gives cross-reference parts and alternative options found for SPD02N80C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD02N80C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SPD02N80C3BT | Power Field-Effect Transistor, | Infineon Technologies AG | SPD02N80C3 vs SPD02N80C3BT |
SPD02N80C3ATMA1 | Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 2/3 PIN | Infineon Technologies AG | SPD02N80C3 vs SPD02N80C3ATMA1 |
SPD02N80C3AT | Power Field-Effect Transistor | Infineon Technologies AG | SPD02N80C3 vs SPD02N80C3AT |