Part Details for SPD02N60S5 by Infineon Technologies AG
Results Overview of SPD02N60S5 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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SPD02N60S5 Information
SPD02N60S5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPD02N60S5
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 292 |
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RFQ | ||
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Quest Components | 1340 |
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$0.6090 / $1.7400 | Buy Now | |
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DISTI #
SP000313943
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EBV Elektronik | Trans MOSFET NCH 600V 18A 3Pin TO252 TR (Alt: SP000313943) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SPD02N60S5
SPD02N60S5 CAD Models
SPD02N60S5 Part Data Attributes
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SPD02N60S5
Infineon Technologies AG
Buy Now
Datasheet
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SPD02N60S5
Infineon Technologies AG
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | GREEN, PLASTIC, TO-252, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 1.8 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 3.2 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
SPD02N60S5 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the SPD02N60S5 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
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The maximum allowable power dissipation for the SPD02N60S5 is 150W at a case temperature of 25°C.
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To protect the SPD02N60S5 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package.
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The recommended gate resistor value for the SPD02N60S5 is between 10Ω and 100Ω, depending on the specific application requirements.