Part Details for SPD02N50C3BTMA1 by Infineon Technologies AG
Results Overview of SPD02N50C3BTMA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SPD02N50C3BTMA1 Information
SPD02N50C3BTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPD02N50C3BTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V72:2272_06384768
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Arrow Electronics | Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 98 Weeks Date Code: 1514 Container: Cut Strips | Americas - 22 |
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$0.1682 / $0.1711 | Buy Now |
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DISTI #
86041110
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Verical | Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R Min Qty: 657 Package Multiple: 1 Date Code: 1501 | Americas - 129268 |
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$0.5716 | Buy Now |
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DISTI #
86049557
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Verical | Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R Min Qty: 657 Package Multiple: 1 Date Code: 1101 | Americas - 66750 |
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$0.5716 | Buy Now |
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DISTI #
86022738
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Verical | Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R Min Qty: 657 Package Multiple: 1 Date Code: 1901 | Americas - 15000 |
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$0.5716 | Buy Now |
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DISTI #
86038393
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Verical | Trans MOSFET N-CH 500V 1.8A 3-Pin(2+Tab) DPAK T/R Min Qty: 657 Package Multiple: 1 Date Code: 1301 | Americas - 5000 |
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$0.5716 | Buy Now |
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Rochester Electronics | SPD02N50 - 500V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 216018 |
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$0.2835 / $0.4573 | Buy Now |
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DISTI #
SP000313942
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EBV Elektronik | Trans MOSFET NCH 500V 18A 3Pin TO252 TR (Alt: SP000313942) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SPD02N50C3BTMA1
SPD02N50C3BTMA1 CAD Models
SPD02N50C3BTMA1 Part Data Attributes
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SPD02N50C3BTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPD02N50C3BTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
Select a part to compare: |
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | GREEN, PLASTIC, TO-252, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 1.8 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 5.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SPD02N50C3BTMA1
This table gives cross-reference parts and alternative options found for SPD02N50C3BTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD02N50C3BTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SPD02N50C3XT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 | SPD02N50C3BTMA1 vs SPD02N50C3XT |
SPD02N50C3BTMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the SPD02N50C3BTMA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
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The recommended gate resistor value for the SPD02N50C3BTMA1 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
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Yes, the SPD02N50C3BTMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
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To protect the device from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.