Part Details for SPB70N10L by Siemens
Overview of SPB70N10L by Siemens
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPB70N10L
| Part # | Distributor | Description | Stock | Price | Buy | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 50 |
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$7.5000 / $11.5400 | Buy Now |
Part Details for SPB70N10L
SPB70N10L CAD Models
SPB70N10L Part Data Attributes:
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SPB70N10L
Siemens
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Datasheet
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SPB70N10L
Siemens
Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SIEMENS A G | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPB70N10L
This table gives cross-reference parts and alternative options found for SPB70N10L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB70N10L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HUF75617D3S | 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | SPB70N10L vs HUF75617D3S |
| FQI6N50TU | 5.5A, 500V, 1.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 | Rochester Electronics LLC | SPB70N10L vs FQI6N50TU |
| FQPF30N06 | 21A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN | Rochester Electronics LLC | SPB70N10L vs FQPF30N06 |
| SPU08P06P | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | SPB70N10L vs SPU08P06P |
| IRF840R | 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | SPB70N10L vs IRF840R |
| 2SK3062-ZJ | Power Field-Effect Transistor, 70A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, TO-263, 3 PIN | NEC Electronics Group | SPB70N10L vs 2SK3062-ZJ |
| 2SJ660 | Power Field-Effect Transistor, 26A I(D), 60V, 0.094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN | SANYO Electric Co Ltd | SPB70N10L vs 2SJ660 |
| FQP13N06 | 13A, 60V, 0.135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | SPB70N10L vs FQP13N06 |
| FDH27N50 | 27A, 500V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | Rochester Electronics LLC | SPB70N10L vs FDH27N50 |
| FQPF13N50C | 13A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN | Rochester Electronics LLC | SPB70N10L vs FQPF13N50C |