Datasheets
SPB20N60S5 by:

Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for SPB20N60S5 by Siemens

Overview of SPB20N60S5 by Siemens

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Part Details for SPB20N60S5

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SPB20N60S5 Part Data Attributes:

SPB20N60S5 Siemens
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SPB20N60S5 Siemens Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 690 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for SPB20N60S5

This table gives cross-reference parts and alternative options found for SPB20N60S5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPB20N60S5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPB20N60S5 20A, 600V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Rochester Electronics LLC SPB20N60S5 vs SPB20N60S5
Part Number Description Manufacturer Compare
FQP4N90 4.2A, 900V, 3.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC SPB20N60S5 vs FQP4N90
HUF76629D3S 20A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation SPB20N60S5 vs HUF76629D3S
SSH7N80A Power Field-Effect Transistor, 7A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor SPB20N60S5 vs SSH7N80A
FQA8N80 8.4A, 800V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN Rochester Electronics LLC SPB20N60S5 vs FQA8N80
SSH4N90AS Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor SPB20N60S5 vs SSH4N90AS
2SK2926(L) Power Field-Effect Transistor, 0.11ohm, N-Channel, Metal-oxide Semiconductor FET, DPAK-3 Hitachi Ltd SPB20N60S5 vs 2SK2926(L)
FQP9N08 9.3A, 80V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC SPB20N60S5 vs FQP9N08
PHB63NQ03LT,118 PHB63NQ03LT NXP Semiconductors SPB20N60S5 vs PHB63NQ03LT,118
FDP55N06 55A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC SPB20N60S5 vs FDP55N06
FQP4N60 4.4A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC SPB20N60S5 vs FQP4N60

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