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Transistors / Power Field-Effect Transistors / SPB17N80C3ATMA1
Datasheets
SPB17N80C3ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for SPB17N80C3ATMA1 by Infineon Technologies AG

Overview of SPB17N80C3ATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for SPB17N80C3ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 33P8201
Newark Mosfet, N Channel, 800V, 17A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:17A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon SPB17N80C3ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $4.6400
  • 10 $3.8900
  • 25 $2.9700
  • 50 $2.8100
  • 100 $2.6400
  • 250 $2.6300
$2.6300 / $4.6400 Buy Now
DISTI # 86AK6350
Newark Mosfet, N-Ch, 800V, 17A, To-263 Rohs Compliant: Yes |Infineon SPB17N80C3ATMA1 Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $2.3500
  • 2,000 $2.2800
$2.2800 / $2.3500 Buy Now
DISTI # SPB17N80C3ATMA1CT-ND
DigiKey MOSFET N-CH 800V 17A TO263-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1684
In Stock
  • 1 $4.5000
  • 10 $3.7800
  • 100 $3.0582
  • 500 $2.7184
  • 1,000 $2.3277
  • 2,000 $2.1917
$2.1917 / $4.5000 Buy Now
DISTI # SPB17N80C3ATMA1
Avnet Americas Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB17N80C3ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel 13000
  • 1,000 $2.5814
  • 2,000 $2.5032
  • 4,000 $2.4250
  • 6,000 $2.3468
  • 8,000 $2.2685
  • 10,000 $2.1903
  • 100,000 $2.1121
$2.1121 / $2.5814 Buy Now
DISTI # 726-SPB17N80C3ATMA1
Mouser Electronics MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3 RoHS: Compliant 9088
  • 1 $4.4500
  • 10 $3.7300
  • 25 $3.2200
  • 100 $2.7300
  • 250 $2.7100
  • 500 $2.3700
  • 1,000 $2.1700
  • 2,000 $2.1000
$2.1000 / $4.4500 Buy Now
DISTI # V72:2272_06377500
Arrow Electronics Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2348 Container: Cut Strips Americas - 849
  • 1 $4.3800
  • 10 $3.6860
  • 25 $3.1290
  • 100 $2.6340
  • 250 $2.5980
  • 500 $2.1350
$2.1350 / $4.3800 Buy Now
Future Electronics Single N-Channel 800 V 290 mOhm 88 nC CoolMOS® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 56000
Reel
  • 1,000 $2.1100
$2.1100 Buy Now
Future Electronics Single N-Channel 800 V 290 mOhm 88 nC CoolMOS® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $2.1100
$2.1100 Buy Now
Bristol Electronics   38
RFQ
DISTI # SPB17N80C3ATMA1
Avnet Americas Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SPB17N80C3ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel 13000
  • 1,000 $2.5814
  • 2,000 $2.5032
  • 4,000 $2.4250
  • 6,000 $2.3468
  • 8,000 $2.2685
  • 10,000 $2.1903
  • 100,000 $2.1121
$2.1121 / $2.5814 Buy Now
DISTI # SP000013370
EBV Elektronik Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) TO-263 (Alt: SP000013370) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days EBV - 157000
Buy Now
New Advantage Corporation Single N-Channel 800 V 290 mOhm 88 nC CoolMOS� Power Mosfet - D2PAK RoHS: Compliant Min Qty: 1 Package Multiple: 1000 45000
  • 1,000 $3.0100
  • 45,000 $2.8100
$2.8100 / $3.0100 Buy Now
Sense Electronic Company Limited TO-263 1000
RFQ
Win Source Electronics MOSFET N-CH 800V 17A TO263-3 133300
  • 17 $3.1090
  • 40 $2.5510
  • 61 $2.4710
  • 84 $2.3920
  • 109 $2.3120
  • 145 $2.0730
$2.0730 / $3.1090 Buy Now

Part Details for SPB17N80C3ATMA1

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SPB17N80C3ATMA1 Part Data Attributes:

Parametric Data
SPB17N80C3ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SPB17N80C3ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 670 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.29 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 51 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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