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Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-SPA11N60C3
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Mouser Electronics | MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS C3 RoHS: Compliant | 1288 |
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$1.4900 / $3.2000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220VAR | 9 |
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$2.3782 / $3.2430 | Buy Now |
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Ameya Holding Limited | Min Qty: 14 | 284 |
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$3.5282 / $3.6371 | Buy Now |
DISTI #
TMOSP7121
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Rutronik | N-CH 600V 6A 380mOhm TO220FP RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube |
Stock DE - 400 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$1.4200 / $1.8300 | Buy Now |
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Chip 1 Exchange | INSTOCK | 10321 |
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RFQ | |
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LCSC | 600V 11A 33W 380m10V7A 3.9V500uA 1PCSNChannel TO-220F-3 MOSFETs ROHS | 208 |
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$2.0764 / $3.1736 | Buy Now |
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SPA11N60C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPA11N60C3
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | TO-220FP, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 340 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.38 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 33 W | |
Pulsed Drain Current-Max (IDM) | 33 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SPA11N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA11N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FCP11N60 | Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220, 1000-TUBE | onsemi | SPA11N60C3 vs FCP11N60 |
SPP11N65C3 | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPA11N60C3 vs SPP11N65C3 |
SPP11N65C3 | 11A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Rochester Electronics LLC | SPA11N60C3 vs SPP11N65C3 |
FCP11N60 | 11A, 600V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Rochester Electronics LLC | SPA11N60C3 vs FCP11N60 |
FCP11N60 | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Fairchild Semiconductor Corporation | SPA11N60C3 vs FCP11N60 |
FCP11N60F | Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220, 1000-TUBE | onsemi | SPA11N60C3 vs FCP11N60F |