Datasheets
SPA08N80C3XKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220FP, 3 PIN

Part Details for SPA08N80C3XKSA1 by Infineon Technologies AG

Results Overview of SPA08N80C3XKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

SPA08N80C3XKSA1 Information

SPA08N80C3XKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SPA08N80C3XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 98K0551
Newark N Channel Mosfet, 800V, 8A P-To-220, Channel Type:N Channel, Drain Source Voltage Vds:800V, Conti... nuous Drain Current Id:8A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Infineon SPA08N80C3XKSA1 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 397
  • 1 $3.0000
  • 10 $1.2700
  • 100 $1.2600
  • 500 $1.2100
  • 1,000 $1.2000
$1.2000 / $3.0000 Buy Now
DISTI # SPA08N80C3XKSA1-ND
DigiKey MOSFET N-CH 800V 8A TO220-FP Min Qty: 1 Lead time: 15 Weeks Container: Tube 947
In Stock
  • 1 $3.2100
  • 50 $1.5656
  • 100 $1.4892
  • 500 $1.2324
  • 1,000 $1.1589
$1.1589 / $3.2100 Buy Now
DISTI # SPA08N80C3XKSA1
Avnet Americas Trans MOSFET N-CH 800V 8A 3-Pin TO-220FP Tube - Rail/Tube (Alt: SPA08N80C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks, 0 Days Container: Tube 0
  • 500 $0.8995
  • 600 $0.8891
  • 1,100 $0.8773
  • 2,500 $0.8669
  • 5,000 $0.8551
$0.8551 / $0.8995 Buy Now
DISTI # 726-SPA08N80C3XKSA1
Mouser Electronics MOSFETs N-Ch 800V 8A TO220FP-3 CoolMOS C3 RoHS: Compliant 464
  • 1 $2.9800
  • 10 $2.5800
  • 25 $1.5700
  • 100 $1.4900
  • 500 $1.1900
  • 1,000 $1.0900
$1.0900 / $2.9800 Buy Now
DISTI # E02:0323_00170911
Arrow Electronics Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2449 Europe - 486
  • 1 $1.2255
  • 50 $1.1812
  • 100 $1.1384
  • 500 $1.0570
  • 1,000 $1.0287
$1.0287 / $1.2255 Buy Now
Future Electronics Single N-Channel 800 V 0.65 Ohm 45 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks Container: Tube 500
Tube
  • 50 $0.9600
  • 1,000 $0.9450
  • 1,500 $0.9400
  • 2,000 $0.9350
  • 2,500 $0.9150
$0.9150 / $0.9600 Buy Now
Future Electronics Single N-Channel 800 V 0.65 Ohm 45 nC CoolMOS™ Power Mosfet - TO-220-3FP RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube 0
Tube
  • 50 $0.9600
  • 1,000 $0.9450
  • 1,500 $0.9400
  • 2,000 $0.9350
  • 2,500 $0.9150
$0.9150 / $0.9600 Buy Now
DISTI # 87252696
Verical Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 7 Package Multiple: 1 Date Code: 2449 Americas - 486
  • 7 $1.1928
  • 50 $1.1497
  • 100 $1.1081
  • 500 $1.0288
  • 1,000 $1.0013
$1.0013 / $1.1928 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 800V, 0.65OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SE... MICONDUCTOR FET, TO-220AB more 99
  • 1 $2.2475
  • 13 $1.7980
  • 43 $1.3485
$1.3485 / $2.2475 Buy Now
DISTI # SP000216310
EBV Elektronik Trans MOSFET NCH 800V 8A 3Pin TO220FP Tube (Alt: SP000216310) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days EBV - 13500
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 500 11000
  • 500 $1.6500
  • 11,000 $1.5200
$1.5200 / $1.6500 Buy Now

Part Details for SPA08N80C3XKSA1

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SPA08N80C3XKSA1 Part Data Attributes

SPA08N80C3XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
SPA08N80C3XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220FP, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description ROHS COMPLIANT, PLASTIC, TO-220FP, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Rating (Eas) 340 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.65 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SPA08N80C3XKSA1

This table gives cross-reference parts and alternative options found for SPA08N80C3XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA08N80C3XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPA80R650CE Infineon Technologies AG Check for Price Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN SPA08N80C3XKSA1 vs IPA80R650CE

SPA08N80C3XKSA1 Related Parts

SPA08N80C3XKSA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the SPA08N80C3XKSA1 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.

  • The recommended gate drive voltage for the SPA08N80C3XKSA1 is between 10V and 15V, with a maximum voltage of 20V.

  • To protect the device, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor.

  • Follow the recommended PCB layout and thermal design guidelines provided in the application note or datasheet, including proper copper tracing, thermal vias, and heat sink attachment.