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Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPA07N60C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 7.3A 3-Pin TO-220FP Tube - Rail/Tube (Alt: SPA07N60C3XKSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 350 |
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$0.8492 / $1.0312 | Buy Now |
DISTI #
726-SPA07N60C3
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Mouser Electronics | MOSFET N-Ch 600V 7.3A TO220FP-3 CoolMOS C3 RoHS: Compliant | 357 |
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$0.9940 / $2.3600 | Buy Now |
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Bristol Electronics | 49 |
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RFQ | ||
DISTI #
SPA07N60C3XKSA1
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Avnet Americas | Trans MOSFET N-CH 600V 7.3A 3-Pin TO-220FP Tube - Rail/Tube (Alt: SPA07N60C3XKSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 350 |
|
$0.8492 / $1.0312 | Buy Now |
DISTI #
SPA07N60C3
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TME | Transistor: N-MOSFET, unipolar, 600V, 7A, 32W, PG-TO220-3-FP Min Qty: 1 | 112 |
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$1.3800 / $1.8600 | Buy Now |
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Ameya Holding Limited | Min Qty: 14 | 606 |
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$2.5869 / $2.6677 | Buy Now |
DISTI #
TMOSP6655
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Rutronik | N-CH 600V 7A 600mOhm TO220FP RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube |
Stock DE - 350 Stock HK - 0 Stock US - 0 Stock SG - 17500 |
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$0.7810 / $1.0124 | Buy Now |
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Chip1Cloud | MOSFET N-CH 650V 7.3A TO-220 | 80000 |
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RFQ | |
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LCSC | 650V 7.3A 32W 600m10V4.6A 3.9V250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS | 37 |
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$1.2116 / $1.8999 | Buy Now |
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SPA07N60C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPA07N60C3
Infineon Technologies AG
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 7.3 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 32 W | |
Pulsed Drain Current-Max (IDM) | 21.9 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SPA07N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA07N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STW18NM60N | N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-247 | STMicroelectronics | SPA07N60C3 vs STW18NM60N |
TK20J60W | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | SPA07N60C3 vs TK20J60W |
STW45NM50 | N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package | STMicroelectronics | SPA07N60C3 vs STW45NM50 |
STW26NM60N | N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in a TO-247 package | STMicroelectronics | SPA07N60C3 vs STW26NM60N |
STW18NM80 | N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-247 package | STMicroelectronics | SPA07N60C3 vs STW18NM80 |