Datasheets
SP202 by:
Polyfet RF Devices
Advanced Thermal Solutions Inc
Amphenol Corporation
ANADIGICS Inc
Analog Devices Inc
Burr-Brown Corp
Central Components Manufacturing
Coherent Inc
Coherent Thermal Solutions
E-tec Interconnect Ltd
EMCORE Corporation
Exar Corporation
Glenair Inc
Kanthal
Lite-On Semiconductor Corporation
Littelfuse Inc
MaxLinear Inc
Mersen Electrical Power
North Atlantic Industries Inc
OMRON Corporation
Pancon Corporation
PMC-Sierra Inc
Polyfet RF Devices
RCD Components Inc
Samtec Inc
Schurter Electronic Components
Secos Corporation
SEI Stackpole Electronics Inc
Sino-American Silicon Products Inc
Sipex Corporation
STMicroelectronics
Synergy Microwave Corp
TE Connectivity
Telcona AG
Thomas & Betts
TT Electronics Resistors
TT Electronics Welwyn Components
Not Found

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for SP202 by Polyfet RF Devices

Results Overview of SP202 by Polyfet RF Devices

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SP202 Information

SP202 by Polyfet RF Devices is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for SP202

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SP202 Part Data Attributes

SP202 Polyfet RF Devices
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SP202 Polyfet RF Devices Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer POLYFET R F DEVICES
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 1.8 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W

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