Part Details for SMUN5335DW1T1G by onsemi
Overview of SMUN5335DW1T1G by onsemi
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SMUN5335DW1T1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50AC7307
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Newark | Transistor, Aec-Q101, Npn/Pnp, 50V, Digital Transistor Polarity:Npn And Pnp Complement, Collector Emitter Voltage V(Br)Ceo:50V, Continuous Collector Current Ic:100Ma, Base Input Resistor R1:2.2Kohm, Base-Emitter Resistor R2:47Kohm, Rohs Compliant: Yes |Onsemi SMUN5335DW1T1G Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.0700 / $0.3390 | Buy Now |
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DISTI #
76T7386
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Newark | Complementary Bipolar Digital Transistor (Brt)/ Reel |Onsemi SMUN5335DW1T1G Min Qty: 9000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0310 / $0.0420 | Buy Now |
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DISTI #
SMUN5335DW1T1GOSCT-ND
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DigiKey | TRANS NPN/PNP PREBIAS SOT363 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
26738 In Stock |
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$0.0315 / $0.3200 | Buy Now |
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DISTI #
SMUN5335DW1T1G
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Avnet Americas | Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: SMUN5335DW1T1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.0298 / $0.0355 | Buy Now |
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DISTI #
SMUN5335DW1T1G
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Avnet Americas | Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: SMUN5335DW1T1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.0298 / $0.0355 | Buy Now |
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DISTI #
863-SMUN5335DW1T1G
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Mouser Electronics | Digital Transistors SS BR XSTR DUAL 50V RoHS: Compliant | 25724 |
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$0.0310 / $0.2600 | Buy Now |
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Future Electronics | TRANS NPN/PNP PREBIAS SOT363 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 657000Reel |
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$0.0302 / $0.0341 | Buy Now |
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Future Electronics | TRANS NPN/PNP PREBIAS SOT363 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.0302 / $0.0341 | Buy Now |
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DISTI #
SMUN5335DW1T1G
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TME | Transistor: NPN / PNP, bipolar, BRT,complementary pair, 50V, 0.1A Min Qty: 5 | 2470 |
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$0.1150 / $0.1790 | Buy Now |
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DISTI #
SMUN5335DW1T1G
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Avnet Silica | Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R (Alt: SMUN5335DW1T1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days | Silica - 24000 |
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Buy Now |
Part Details for SMUN5335DW1T1G
SMUN5335DW1T1G CAD Models
SMUN5335DW1T1G Part Data Attributes:
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SMUN5335DW1T1G
onsemi
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Datasheet
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Compare Parts:
SMUN5335DW1T1G
onsemi
Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SC-88/SC70-6/SOT-363 6 LEAD | |
| Package Description | 419B-02, SC-88, SC-70, 6 PIN | |
| Pin Count | 6 | |
| Manufacturer Package Code | 419B-02 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 43 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO 21.36 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 80 | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN AND PNP | |
| Power Dissipation-Max (Abs) | 0.256 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |