Datasheets
SMBJ58CAHM4G by: Taiwan Semiconductor

Trans Voltage Suppressor Diode, 600W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

Part Details for SMBJ58CAHM4G by Taiwan Semiconductor

Results Overview of SMBJ58CAHM4G by Taiwan Semiconductor

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SMBJ58CAHM4G Information

SMBJ58CAHM4G by Taiwan Semiconductor is a Transient Suppressor.
Transient Suppressors are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for SMBJ58CAHM4G

Part # Distributor Description Stock Price Buy
DISTI # SMBJ58CAHM4G-ND
DigiKey TVS DIODE 58VWM 93.6VC DO214AA Lead time: 14 Weeks Container: Tape & Reel (TR) Limited Supply - Call
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DISTI # SMBJ58CAHM4G
EBV Elektronik Diode TVS Single BiDir 58V 600W 2Pin DO214AA Plastic TR (Alt: SMBJ58CAHM4G) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 EBV - 0
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Part Details for SMBJ58CAHM4G

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SMBJ58CAHM4G Part Data Attributes

SMBJ58CAHM4G Taiwan Semiconductor
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SMBJ58CAHM4G Taiwan Semiconductor Trans Voltage Suppressor Diode, 600W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Package Description SMB, 2 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 71.2 V
Breakdown Voltage-Min 64.4 V
Breakdown Voltage-Nom 67.8 V
Clamping Voltage-Max 93.6 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL
Power Dissipation-Max 3 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 58 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

SMBJ58CAHM4G Related Parts

SMBJ58CAHM4G Frequently Asked Questions (FAQ)

  • The recommended footprint and land pattern for SMBJ58CAHM4G can be found in the Taiwan Semiconductor's application note AN-10365, which provides detailed guidelines for PCB layout and assembly.

  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal interface material to reduce the junction temperature. Additionally, ensure that the device is operated within the recommended operating conditions and that the PCB is designed to minimize thermal resistance.

  • The SMBJ58CAHM4G has an ESD rating of Human Body Model (HBM) ±15kV, Machine Model (MM) ±200V, and Charged Device Model (CDM) ±1kV, as per the datasheet.

  • Yes, the SMBJ58CAHM4G can be used in a parallel configuration to increase the current handling capability, but it is recommended to ensure that the devices are properly matched and that the PCB is designed to minimize current imbalance and thermal mismatch between the devices.

  • The typical response time of the SMBJ58CAHM4G to an ESD event is in the range of 1-10 ns, as per the datasheet.