Datasheets
SKM75GAL063D by: SEMIKRON

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, CASE D63, SEMITRANS 2, 5 PIN

Part Details for SKM75GAL063D by SEMIKRON

Overview of SKM75GAL063D by SEMIKRON

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Applications Industrial Automation

Price & Stock for SKM75GAL063D

Part # Distributor Description Stock Price Buy
DISTI # SKM75GAL063D
TME Module: IGBT, diode/transistor, boost chopper, Urmax: 600V, Ic: 75A Min Qty: 1 0
  • 1 $43.0600
  • 3 $40.3600
  • 8 $36.3800
$36.3800 / $43.0600 RFQ
ComSIT USA SUPERFAST NPT-IGBT MODULE Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel RoHS: Not Compliant Europe - 1
RFQ
DISTI # SKM75GAL063D
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ

Part Details for SKM75GAL063D

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SKM75GAL063D Part Data Attributes:

SKM75GAL063D SEMIKRON
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SKM75GAL063D SEMIKRON Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, CASE D63, SEMITRANS 2, 5 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMIKRON INTERNATIONAL
Part Package Code DO-204
Package Description FLANGE MOUNT, R-XUFM-X5
Pin Count 2
Manufacturer Package Code CASE D63
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 1998-08-01
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X5
JESD-609 Code e2
Number of Elements 1
Number of Terminals 5
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 350 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish TIN SILVER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 385 ns
Turn-on Time-Nom (ton) 110 ns
VCEsat-Max 2.5 V

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