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Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, CASE D61, SEMITRANS 2, 7 PIN
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
96W3227
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Newark | Igbt Array & Module Transistor, Dual Npn, 81 A, 1.85 V, 1.2 Kv, Semitrans 2 Rohs Compliant: Yes |Semikron SKM50GB12T4 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 10 |
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$64.0600 / $91.5200 | Buy Now |
DISTI #
SKM50GB12T4
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TME | Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 50A Min Qty: 1 | 0 |
|
$51.7600 / $65.2400 | RFQ |
DISTI #
SKM50GB12T4
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 1100 |
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RFQ |
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SKM50GB12T4
SEMIKRON
Buy Now
Datasheet
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SKM50GB12T4
SEMIKRON
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, CASE D61, SEMITRANS 2, 7 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
Part Package Code | DO-204 | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Pin Count | 2 | |
Manufacturer Package Code | CASE D61 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Semikron | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 81 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Reference Standard | IEC-60747-1; UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 400 ns | |
Turn-on Time-Nom (ton) | 127 ns | |
VCEsat-Max | 2.1 V |