Datasheets
SKM50GB12T4 by: SEMIKRON

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, CASE D61, SEMITRANS 2, 7 PIN

Part Details for SKM50GB12T4 by SEMIKRON

Overview of SKM50GB12T4 by SEMIKRON

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Price & Stock for SKM50GB12T4

Part # Distributor Description Stock Price Buy
DISTI # 96W3227
Newark Igbt Array & Module Transistor, Dual Npn, 81 A, 1.85 V, 1.2 Kv, Semitrans 2 Rohs Compliant: Yes |Semikron SKM50GB12T4 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 10
  • 1 $91.5200
  • 5 $73.2200
  • 16 $68.7200
  • 32 $64.0600
$64.0600 / $91.5200 Buy Now
DISTI # SKM50GB12T4
TME Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 50A Min Qty: 1 0
  • 1 $65.2400
  • 3 $57.5900
  • 8 $51.7600
$51.7600 / $65.2400 RFQ
DISTI # SKM50GB12T4
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 1100
RFQ

Part Details for SKM50GB12T4

SKM50GB12T4 Part Data Attributes:

SKM50GB12T4 SEMIKRON
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SKM50GB12T4 SEMIKRON Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, CASE D61, SEMITRANS 2, 7 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Part Package Code DO-204
Package Description FLANGE MOUNT, R-XUFM-X7
Pin Count 2
Manufacturer Package Code CASE D61
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Semikron
Case Connection ISOLATED
Collector Current-Max (IC) 81 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Reference Standard IEC-60747-1; UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 400 ns
Turn-on Time-Nom (ton) 127 ns
VCEsat-Max 2.1 V

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