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Transistors IGBTs SKM50GAL12T4

SKM50GAL12T4
SEMIKRON
Description: Insulated Gate Bipolar Transistor, 81A I(C), 1200V V(BR)CES

Overview of SKM50GAL12T4 by SEMIKRON

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 3 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for SKM50GAL12T4 by SEMIKRON

Part # Manufacturer Description Stock Price Buy
DISTI # 86W0698
Newark Igbt, Module, 1.2Kv, 81A, Continuous Collector Current:81A, Collector Emitter Saturation Voltage:1.85V, Power Dissipation:-, Operating Temperature Max:175°C, Igbt Termination:Stud, Collector Emitter Voltage Max:1.2Kv, Product Range:-Rohs Compliant: Yes |Semikron SKM50GAL12T4 RoHS: Compliant Min Qty: 8 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 5 $63.8400
  • 10 $62.1000
  • 25 $61.2300
  • 50 $60.3600
  • 100 $56.8900
$56.8900 / $63.8400 Buy Now
DISTI # SKM50GAL12T4
TME Module: IGBT, diode/transistor, boost chopper, Urmax: 1.2kV, screw Min Qty: 1 0
  • 1 $65.6500
  • 3 $58.9500
  • 8 $55.0400
$55.0400 / $65.6500 RFQ
DISTI # SKM50GAL12T4
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ

CAD Models for SKM50GAL12T4 by SEMIKRON
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There are no models available for this part yet.

Part Data Attributes for SKM50GAL12T4 by SEMIKRON
Parametric Data

SKM50GAL12T4
SEMIKRON
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
SEMIKRON INTERNATIONAL
Reach Compliance Code
compliant
ECCN Code
EAR99
Collector Current-Max (IC)
81 A
Collector-Emitter Voltage-Max
1200 V
Gate-Emitter Voltage-Max
20 V
Number of Elements
1
Operating Temperature-Max
175 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
VCEsat-Max
2.1 V
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  1. SKM50GAL12T4
    SEMIKRON
    Insulated Gate Bipolar Transistor, 81A I(C), 1200V V(BR)CES
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