Datasheets
SKM300GAL12E4 by: SEMIKRON

Insulated Gate Bipolar Transistor, 422A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7

Part Details for SKM300GAL12E4 by SEMIKRON

Overview of SKM300GAL12E4 by SEMIKRON

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Price & Stock for SKM300GAL12E4

Part # Distributor Description Stock Price Buy
DISTI # 77R2566
Newark Igbt Module, Single, 1.2Kv, 422A, Continuous Collector Current:422A, Collector Emitter Saturation Voltage:1.85V, Power Dissipation:-, Operating Temperature Max:125°C, Igbt Termination:Stud, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM300GAL12E4 Min Qty: 12 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 10 $141.9200
  • 25 $139.9000
  • 50 $137.8700
  • 100 $129.7600
$129.7600 / $141.9200 Buy Now
DISTI # SKM300GAL12E4
TME Module: IGBT, diode/transistor, boost chopper, Urmax: 1.2kV, screw Min Qty: 1 8
  • 1 $166.9800
  • 3 $149.8500
  • 8 $134.8700
$134.8700 / $166.9800 Buy Now

Part Details for SKM300GAL12E4

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SKM300GAL12E4 Part Data Attributes:

SKM300GAL12E4 SEMIKRON
Buy Now Datasheet
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SKM300GAL12E4 SEMIKRON Insulated Gate Bipolar Transistor, 422A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Part Package Code DO-204
Package Description FLANGE MOUNT, R-XUFM-X4
Pin Count 2
Manufacturer Package Code CASE D56
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Semikron
Case Connection ISOLATED
Collector Current-Max (IC) 422 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X5
Number of Elements 1
Number of Terminals 5
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Reference Standard IEC-60747-1; UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 637 ns
Turn-on Time-Nom (ton) 264 ns
VCEsat-Max 2.1 V

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