Part Details for SKIIP26AC126V1 by SEMIKRON
Overview of SKIIP26AC126V1 by SEMIKRON
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SKIIP26AC126V1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SKIIP26AC126V1
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TME | Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 | 0 |
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$261.2300 / $281.8300 | RFQ |
Part Details for SKIIP26AC126V1
SKIIP26AC126V1 CAD Models
SKIIP26AC126V1 Part Data Attributes
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SKIIP26AC126V1
SEMIKRON
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Datasheet
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SKIIP26AC126V1
SEMIKRON
Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 2, 42 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
| Package Description | FLANGE MOUNT, R-XUFM-X42 | |
| Pin Count | 42 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Semikron | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 88 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X42 | |
| JESD-609 Code | e3/e4 | |
| Number of Elements | 6 | |
| Number of Terminals | 42 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Reference Standard | IEC-60747-1; UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | TIN/SILVER | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 520 ns | |
| Turn-on Time-Nom (ton) | 110 ns | |
| VCEsat-Max | 2.1 V |