Part Details for SKIIP23NAB126V10 by SEMIKRON
Overview of SKIIP23NAB126V10 by SEMIKRON
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for SKIIP23NAB126V10
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SKIIP23NAB126V10
|
TME | Module: IGBT, diode/transistor, boost chopper, Urmax: 1.2kV, screw Min Qty: 1 | 0 |
|
$172.4700 / $217.7500 | RFQ |
Part Details for SKIIP23NAB126V10
SKIIP23NAB126V10 CAD Models
SKIIP23NAB126V10 Part Data Attributes
|
|
SKIIP23NAB126V10
SEMIKRON
Buy Now
Datasheet
|
Compare Parts:
SKIIP23NAB126V10
SEMIKRON
Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
| Package Description | FLANGE MOUNT, R-XUFM-X42 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 41 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X42 | |
| Number of Elements | 6 | |
| Number of Terminals | 42 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 565 ns | |
| Turn-on Time-Nom (ton) | 115 ns | |
| VCEsat-Max | 2.1 V |