Datasheets
SKIIP22NAB06I by: SEMIKRON

Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, CASE M2, MINISKIIP-28

Part Details for SKIIP22NAB06I by SEMIKRON

Overview of SKIIP22NAB06I by SEMIKRON

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Applications Energy and Power Systems Renewable Energy

Part Details for SKIIP22NAB06I

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SKIIP22NAB06I Part Data Attributes

SKIIP22NAB06I SEMIKRON
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SKIIP22NAB06I SEMIKRON Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, CASE M2, MINISKIIP-28
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description SPECIAL SHAPE, R-XXSS-X28
Pin Count 28
Manufacturer Package Code CASE M2
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 36 A
Collector-Emitter Voltage-Max 600 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XXSS-X28
JESD-609 Code e2
Number of Elements 7
Number of Terminals 28
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SPECIAL SHAPE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish TIN SILVER
Terminal Form UNSPECIFIED
Terminal Position UNSPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 750 ns
Turn-on Time-Nom (ton) 130 ns
VCEsat-Max 2.7 V

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