Datasheets
SKIIP03NEB066V3 by: SEMIKRON

Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MINISKIIP 0, 18 PIN

Part Details for SKIIP03NEB066V3 by SEMIKRON

Overview of SKIIP03NEB066V3 by SEMIKRON

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for SKIIP03NEB066V3

Part # Distributor Description Stock Price Buy
DISTI # SKIIP03NEB066V3
TME Module: IGBT, diode/transistor, boost chopper, Urmax: 600V, Ic: 15A Min Qty: 1 0
  • 1 $81.5300
  • 3 $72.0400
  • 8 $64.7000
$64.7000 / $81.5300 RFQ

Part Details for SKIIP03NEB066V3

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SKIIP03NEB066V3 Part Data Attributes:

SKIIP03NEB066V3 SEMIKRON
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SKIIP03NEB066V3 SEMIKRON Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MINISKIIP 0, 18 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description FLANGE MOUNT, R-XUFM-X18
Pin Count 18
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Collector Current-Max (IC) 25 A
Collector-Emitter Voltage-Max 600 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X18
Number of Elements 7
Number of Terminals 18
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 200 ns
Turn-on Time-Nom (ton) 50 ns
VCEsat-Max 1.85 V

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