Datasheets
SK8403170L by:

Power Field-Effect Transistor, 16A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSSO8-F1-B, 8 PIN

Part Details for SK8403170L by Panasonic Electronic Components

Overview of SK8403170L by Panasonic Electronic Components

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Price & Stock for SK8403170L

Part # Distributor Description Stock Price Buy
DISTI # P16264CT-ND
DigiKey MOSFET N-CH 30V 16A 8HSSO Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Tape & Reel (TR) 1546
In Stock
  • 1 $0.9600
  • 10 $0.7850
  • 100 $0.6104
  • 500 $0.5174
  • 1,000 $0.4215
$0.4215 / $0.9600 Buy Now
Onlinecomponents.com Trans MOSFET N-CH Si 30V 16A 8-Pin HSSO8-F1-B T/R RoHS: Compliant 0
  • 3,000 $0.4110
  • 6,000 $0.3840
  • 12,000 $0.3600
  • 24,000 $0.3510
$0.3510 / $0.4110 Buy Now
Quest Components   2400
  • 1 $1.6860
  • 238 $0.6744
  • 1,187 $0.5901
$0.5901 / $1.6860 Buy Now
Chip1Cloud MOSFET N-CH 30V 16A 8HSSO 66000
RFQ

Part Details for SK8403170L

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SK8403170L Part Data Attributes:

SK8403170L Panasonic Electronic Components
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SK8403170L Panasonic Electronic Components Power Field-Effect Transistor, 16A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSSO8-F1-B, 8 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer PANASONIC CORP
Package Description HSSO8-F1-B, 8 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Panasonic
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.0058 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-F5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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