Datasheets
SK75GD066T by: SEMIKRON

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, CASE T 74, SEMITOP 4, 22 PIN

Part Details for SK75GD066T by SEMIKRON

Overview of SK75GD066T by SEMIKRON

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Price & Stock for SK75GD066T

Part # Distributor Description Stock Price Buy
DISTI # SK75GD066T
TME Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 0
  • 1 $383.8200
  • 3 $339.2400
  • 6 $304.4500
$304.4500 / $383.8200 RFQ
DISTI # SK75GD066T
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ

Part Details for SK75GD066T

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SK75GD066T Part Data Attributes:

SK75GD066T SEMIKRON
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SK75GD066T SEMIKRON Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, CASE T 74, SEMITOP 4, 22 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description FLANGE MOUNT, R-XUFM-X22
Pin Count 22
Manufacturer Package Code CASE T 74
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 75 A
Collector-Emitter Voltage-Max 600 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X22
Number of Elements 6
Number of Terminals 22
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
VCEsat-Max 1.85 V

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