Part Details for SK60GAL125 by SEMIKRON
Overview of SK60GAL125 by SEMIKRON
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Renewable Energy
Electronic Manufacturing
Price & Stock for SK60GAL125
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SK60GAL125
|
TME | Module: IGBT, diode/transistor, boost chopper, Urmax: 1.2kV, screw Min Qty: 1 | 0 |
|
$131.5200 / $178.3300 | RFQ |
DISTI #
SK60GAL125
|
Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
|
RFQ |
Part Details for SK60GAL125
SK60GAL125 CAD Models
SK60GAL125 Part Data Attributes
|
SK60GAL125
SEMIKRON
Buy Now
Datasheet
|
Compare Parts:
SK60GAL125
SEMIKRON
Insulated Gate Bipolar Transistor, 51A I(C), 1200V V(BR)CES, N-Channel, CASE T18, SEMITOP 2, 7 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Pin Count | 7 | |
Manufacturer Package Code | CASE T18 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 51 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 1 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 3.7 V |