Part Details for SK35GD126ET by SEMIKRON
Overview of SK35GD126ET by SEMIKRON
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Renewable Energy
Price & Stock for SK35GD126ET
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SK35GD126ET
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TME | Module: IGBT, transistor/transistor, Urmax: 1.2kV, Ic: 35A, screw Min Qty: 1 | 0 |
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$201.7400 / $240.7500 | RFQ |
DISTI #
SK35GD126ET
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for SK35GD126ET
SK35GD126ET CAD Models
SK35GD126ET Part Data Attributes
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SK35GD126ET
SEMIKRON
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Datasheet
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SK35GD126ET
SEMIKRON
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, COMPACT, CASE T52, SEMITOP-19
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
Package Description | FLANGE MOUNT, R-XUFM-X15 | |
Pin Count | 19 | |
Manufacturer Package Code | CASE T52 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Semikron | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 40 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | COMPLEX | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X15 | |
JESD-609 Code | e3/e4 | |
Number of Elements | 6 | |
Number of Terminals | 15 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Reference Standard | IEC-60747-1; UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | TIN/SILVER | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 520 ns | |
Turn-on Time-Nom (ton) | 115 ns | |
VCEsat-Max | 2.1 V |