Datasheets
SK35GD126ET by: SEMIKRON

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, COMPACT, CASE T52, SEMITOP-19

Part Details for SK35GD126ET by SEMIKRON

Overview of SK35GD126ET by SEMIKRON

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Applications Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy

Price & Stock for SK35GD126ET

Part # Distributor Description Stock Price Buy
DISTI # SK35GD126ET
TME Module: IGBT, transistor/transistor, Urmax: 1.2kV, Ic: 35A, screw Min Qty: 1 0
  • 1 $240.7500
  • 3 $216.2300
  • 10 $201.7400
$201.7400 / $240.7500 RFQ
DISTI # SK35GD126ET
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ

Part Details for SK35GD126ET

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SK35GD126ET Part Data Attributes

SK35GD126ET SEMIKRON
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SK35GD126ET SEMIKRON Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, COMPACT, CASE T52, SEMITOP-19
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description FLANGE MOUNT, R-XUFM-X15
Pin Count 19
Manufacturer Package Code CASE T52
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Semikron
Case Connection ISOLATED
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X15
JESD-609 Code e3/e4
Number of Elements 6
Number of Terminals 15
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Reference Standard IEC-60747-1; UL RECOGNIZED
Surface Mount NO
Terminal Finish TIN/SILVER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 520 ns
Turn-on Time-Nom (ton) 115 ns
VCEsat-Max 2.1 V

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