Part Details for SK100GB066T by SEMIKRON
Overview of SK100GB066T by SEMIKRON
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SK100GB066T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
25R6003
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Newark | Igbt Module, Continuous Collector Current:151A, Collector Emitter Saturation Voltage:600V, Power Dissipation:-, Operating Temperature Max:175°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:800Mv, Product Range:- Rohs Compliant: Yes |Semikron SK100GB066T Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$80.2800 | Buy Now |
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DISTI #
SK100GB066T
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TME | Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 100A Min Qty: 1 | 0 |
|
$128.5400 / $153.1800 | RFQ |
Part Details for SK100GB066T
SK100GB066T CAD Models
SK100GB066T Part Data Attributes:
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SK100GB066T
SEMIKRON
Buy Now
Datasheet
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Compare Parts:
SK100GB066T
SEMIKRON
Insulated Gate Bipolar Transistor, 96A I(C), 600V V(BR)CES, N-Channel, CASE T73, SEMITOP-16
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 16 | |
| Manufacturer Package Code | CASE T73 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 96 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1131 ns | |
| Turn-on Time-Nom (ton) | 272 ns | |
| VCEsat-Max | 1.85 V |