Part Details for SIZ704DT-T1-GE3 by Vishay Intertechnologies
Overview of SIZ704DT-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIZ704DT-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
35R6203
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Newark | N Channel Mosfet, 30V, 16A, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:16A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V, No. Of Pins:6Pinsrohs Compliant: Yes |Vishay SIZ704DT-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.6020 | Buy Now |
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DISTI #
35R0028
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Newark | N Channel Mosfet, 30V, 16A, Transistor Polarity:N Channel, Continuous Drain Current Id:16A, Drain Source Voltage Vds:30V, On Resistance Rds(On):13.5Mohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.5V Rohs Compliant: Yes |Vishay SIZ704DT-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.4330 / $0.5110 | Buy Now |
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DISTI #
SIZ704DT-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-Channel 30V 9.4A/14A 6-Pin PowerPAIR - Tape and Reel (Alt: SIZ704DT-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.3989 | Buy Now |
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Bristol Electronics | 3000 |
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RFQ | ||
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Quest Components | 2400 |
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$0.5698 / $1.6280 | Buy Now | |
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DISTI #
SIZ704DT-T1-GE3
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TTI | MOSFETs 30V 12/16A 20/30W 24/13.5mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.4060 / $0.4360 | Buy Now |
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DISTI #
SIZ704DT-T1-GE3
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TME | Transistor: N-MOSFET x2, TrenchFET®, unipolar, 30V, 12/16A, 20/30W Min Qty: 3000 | 0 |
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$0.7900 | RFQ |
Part Details for SIZ704DT-T1-GE3
SIZ704DT-T1-GE3 CAD Models
SIZ704DT-T1-GE3 Part Data Attributes
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SIZ704DT-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIZ704DT-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 9.4A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR-6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 5 mJ | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 9.4 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N6 | |
| JESD-609 Code | e3 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |