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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
20AC3915
|
Newark | N-Channel 200-V (D-S) Mosfet |Vishay SISS98DN-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.4130 / $0.4230 | Buy Now |
DISTI #
75AH9199
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Newark | Mosfet, N-Ch, 200V, 14.1A, 150Deg C, 57W Rohs Compliant: Yes |Vishay SISS98DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.7650 / $1.0900 | Buy Now |
DISTI #
SISS98DN-T1-GE3
|
Avnet Americas | MOSFET N-Channel 200V 14.1A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SISS98DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
|
$0.4192 / $0.5325 | Buy Now |
DISTI #
78-SISS98DN-T1-GE3
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Mouser Electronics | MOSFET 200V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant | 11227 |
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$0.4660 / $1.0600 | Buy Now |
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Future Electronics | N-Channel 200 V 105 mOhm 57 W ThunderFET Power Mosfet - PowerPAK 1212-8S RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.3950 / $0.4150 | Buy Now |
|
Future Electronics | N-Channel 200 V 105 mOhm 57 W ThunderFET Power Mosfet - PowerPAK 1212-8S RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.3950 / $0.4150 | Buy Now |
DISTI #
SISS98DN-T1-GE3
|
TTI | MOSFET 200V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
|
$0.4900 / $0.5200 | Buy Now |
DISTI #
SISS98DN-T1-GE3
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TME | Transistor: N-MOSFET, ThunderFET, unipolar, 200V, 11.2A, Idm: 30A Min Qty: 1 | 0 |
|
$0.8800 / $1.3100 | RFQ |
DISTI #
SISS98DN-T1-GE3
|
EBV Elektronik | MOSFET N-Channel 200V 14.1A 8-Pin PowerPAK T/R (Alt: SISS98DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 39 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
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SISS98DN-T1-GE3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SISS98DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 38 Weeks | |
Date Of Intro | 2016-07-19 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 5 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 14.1 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 7 pF | |
JESD-30 Code | S-PDSO-N5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 57 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 60 ns | |
Turn-on Time-Max (ton) | 54 ns |