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Transistors / Power Field-Effect Transistors / SISS94DN-T1-GE3
Datasheets
SISS94DN-T1-GE3 by:

Power Field-Effect Transistor,

Part Details for SISS94DN-T1-GE3 by Vishay Intertechnologies

Overview of SISS94DN-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

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Price & Stock for SISS94DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 64AH1460
Newark Mosfet, N-Ch, 200V, 19.5A, 150Deg C Rohs Compliant: Yes |Vishay SISS94DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 23310
  • 1 $0.9550
  • 10 $0.7820
  • 25 $0.7330
  • 50 $0.6840
  • 100 $0.6350
$0.6350 / $0.9550 Buy Now
DISTI # SISS94DN-T1-GE3
Avnet Americas N-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SISS94DN-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.4656
$0.4656 Buy Now
DISTI # 78-SISS94DN-T1-GE3
Mouser Electronics MOSFETs N-CHANNEL 200-V(D-S) PowerPAK 1212-8S RoHS: Compliant 35676
  • 1 $0.9000
  • 10 $0.6940
  • 100 $0.5280
  • 500 $0.4230
  • 1,000 $0.3870
  • 3,000 $0.3290
  • 24,000 $0.3240
$0.3240 / $0.9000 Buy Now
DISTI # E02:0323_16045281
Arrow Electronics Trans MOSFET N-CH 200V 5.4A 8-Pin PowerPAK 1212-S EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 Lead time: 26 Weeks Date Code: 2425 Europe - 6000
  • 6,000 $0.3457
$0.3457 Buy Now
Future Electronics N-Channel 200 V 5.4 A 75 mOhm Surface Mount Mosfet - PowerPAK 1212-8S RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks Container: Reel 18000
Reel
  • 3,000 $0.3200
  • 6,000 $0.3150
  • 9,000 $0.3100
  • 12,000 $0.3100
  • 15,000 $0.3000
$0.3000 / $0.3200 Buy Now
Future Electronics N-Channel 200 V 5.4 A 75 mOhm Surface Mount Mosfet - PowerPAK 1212-8S RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.3450
  • 6,000 $0.3400
  • 9,000 $0.3350
  • 12,000 $0.3350
  • 15,000 $0.3250
$0.3250 / $0.3450 Buy Now
DISTI # 82701732
Verical Trans MOSFET N-CH 200V 5.4A 8-Pin PowerPAK 1212-S EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 Date Code: 2425 Americas - 6000
  • 6,000 $0.3465
$0.3465 Buy Now
DISTI # SISS94DN-T1-GE3
TTI MOSFETs N-CHANNEL 200-V(D-S) PowerPAK 1212-8S pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel Americas - 0
  • 6,000 $0.4800
$0.4800 Buy Now
DISTI # SISS94DN-T1-GE3
TME Transistor: N-MOSFET, ThunderFET, unipolar, 200V, 15.6A, Idm: 25A Min Qty: 1 0
  • 1 $0.8190
  • 5 $0.7380
  • 25 $0.6520
  • 100 $0.5860
  • 500 $0.5470
$0.5470 / $0.8190 RFQ
DISTI # SISS94DN-T1-GE3
Avnet Asia N-CHANNEL 200-V (D-S) MOSFET (Alt: SISS94DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days 0
RFQ
DISTI # SISS94DN-T1-GE3
EBV Elektronik N-CHANNEL 200-V (D-S) MOSFET (Alt: SISS94DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days EBV - 3000
Buy Now
GlobX GmbH Stock Germany, Full labels, from Distributor, Factory Sealed, Date Code: 22+ 60000
RFQ

Part Details for SISS94DN-T1-GE3

SISS94DN-T1-GE3 CAD Models

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SISS94DN-T1-GE3 Part Data Attributes

Parametric Data
SISS94DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SISS94DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 5 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 19.5 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JESD-30 Code S-PDSO-N8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 65.8 W
Pulsed Drain Current-Max (IDM) 25 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 54 ns
Turn-on Time-Max (ton) 34 ns

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