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Part Details for SISS32ADN-T1-GE3 by Vishay Intertechnologies
Overview of SISS32ADN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for SISS32ADN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
81AH9259
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Newark | Mosfet, N-Ch, 80V, 63A, Powerpak 1212-8S Rohs Compliant: Yes |Vishay SISS32ADN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.0800 / $1.7000 | Buy Now |
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DISTI #
SISS32ADN-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 80V 63A 8-Pin PowerPAK 1212 T/R (Alt: SISS32ADN-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days | 0 |
|
$0.9098 | Buy Now |
|
DISTI #
78-SISS32ADN-T1-GE3
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Mouser Electronics | MOSFET 80V N-CHANNEL (D-S) MOS RoHS: Compliant | 17557 |
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$0.6270 / $1.4900 | Buy Now |
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Future Electronics | N-Channel 80-V (D-S) MOSFET PowerPAK 1212-8S RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 3000 Container: Bag | 0Bag |
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$0.6150 / $0.7550 | Buy Now |
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Future Electronics | N-Channel 80-V (D-S) MOSFET PowerPAK 1212-8S RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 3000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
|
$0.6150 / $0.8300 | Buy Now |
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DISTI #
SISS32ADN-T1-GE3
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TTI | MOSFET 80V N-CHANNEL (D-S) MOS pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.6270 | Buy Now |
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DISTI #
SISS32ADN-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 80V, 50.3A, Idm: 120A Min Qty: 1 | 0 |
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$0.9900 / $1.4900 | RFQ |
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DISTI #
SISS32ADN-T1-GE3
|
Avnet Asia | Transistor MOSFET N-CH 80V 63A 8-Pin PowerPAK 1212 T/R (Alt: SISS32ADN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | 0 |
|
$0.6657 / $0.7501 | Buy Now |
|
DISTI #
SISS32ADN-T1-GE3
|
EBV Elektronik | Transistor MOSFET N-CH 80V 63A 8-Pin PowerPAK 1212 T/R (Alt: SISS32ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SISS32ADN-T1-GE3
SISS32ADN-T1-GE3 CAD Models
SISS32ADN-T1-GE3 Part Data Attributes:
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SISS32ADN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SISS32ADN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Date Of Intro | 2020-04-28 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 63 A | |
| Drain-source On Resistance-Max | 0.0087 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 16 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 65.7 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 52 ns | |
| Turn-on Time-Max (ton) | 36 ns |