-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SISS26DN-T1-GE3 by Vishay Intertechnologies
Overview of SISS26DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Price & Stock for SISS26DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
37AC0920
|
Newark | Mosfet, N-Ch, 60V, 60A, 150Deg C, 57W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.6V Rohs Compliant: Yes |Vishay SISS26DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.2300 / $1.8100 | Buy Now |
|
DISTI #
59AC7455
|
Newark | N-Channel 60-V (D-S) Mosfet |Vishay SISS26DN-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6470 / $0.6610 | Buy Now |
|
DISTI #
SISS26DN-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 60V 23.3A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISS26DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 3000 |
|
$0.5718 / $0.6405 | Buy Now |
|
DISTI #
78-SISS26DN-T1-GE3
|
Mouser Electronics | MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant | 4082 |
|
$0.6080 / $1.6100 | Buy Now |
|
|
Future Electronics | 60V 60A N-ch 0.0045 Ohm PowerPAK 1212-8S RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 0Reel |
|
$0.5850 / $0.6050 | Buy Now |
|
|
Future Electronics | 60V 60A N-ch 0.0045 Ohm PowerPAK 1212-8S RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.5850 / $0.6050 | Buy Now |
|
DISTI #
SISS26DN-T1-GE3
|
TTI | MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 18000 In Stock |
|
$0.6080 / $0.6200 | Buy Now |
|
DISTI #
SISS26DN-T1-GE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 60V, 60A, Idm: 150A, 36W Min Qty: 1 | 0 |
|
$1.3500 / $2.0300 | RFQ |
|
DISTI #
SISS26DN-T1-GE3
|
Avnet Asia | Trans MOSFET N-CH 60V 23.3A 8-Pin PowerPAK 1212 (Alt: SISS26DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | 0 |
|
RFQ | |
|
DISTI #
SISS26DN-T1-GE3
|
EBV Elektronik | Trans MOSFET N-CH 60V 23.3A 8-Pin PowerPAK 1212 (Alt: SISS26DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SISS26DN-T1-GE3
SISS26DN-T1-GE3 CAD Models
SISS26DN-T1-GE3 Part Data Attributes
|
|
SISS26DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SISS26DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 31.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 29 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 57 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 44 ns | |
| Turn-on Time-Max (ton) | 68 ns |