Part Details for SISS22DN-T1-GE3 by Vishay Intertechnologies
Overview of SISS22DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
Price & Stock for SISS22DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
81AC3501
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Newark | N-Channel 60-V (D-S) Mosfet |Vishay SISS22DN-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6400 / $0.6650 | Buy Now |
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DISTI #
99AC0542
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Newark | Mosfet, N-Ch, 60V, 90.6A, 65.7W, Transistor Polarity:N Channel, Continuous Drain Current Id:90.6A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.00325Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.6V, Power Rohs Compliant: Yes |Vishay SISS22DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.0400 / $1.6200 | Buy Now |
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DISTI #
SISS22DN-T1-GE3
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Avnet Americas | N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SISS22DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$0.5882 / $0.6563 | Buy Now |
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DISTI #
78-SISS22DN-T1-GE3
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Mouser Electronics | MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant | 11830 |
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$0.6150 / $1.4900 | Buy Now |
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Future Electronics | SISS22DN Series 60 V 150 A 5 W SMT N-Channel Mosfet - PowerPAK-1212-8S RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 6000Reel |
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$0.6050 / $0.6300 | Buy Now |
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Future Electronics | SISS22DN Series 60 V 150 A 5 W SMT N-Channel Mosfet - PowerPAK-1212-8S RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 22 Weeks Container: Reel | 0Reel |
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$0.6050 / $0.6300 | Buy Now |
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Bristol Electronics | 3000 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 90.6A I(D), 60V, 0.004OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2400 |
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$0.7938 / $2.1168 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 90.6A I(D), 60V, 0.004OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 69 |
|
$0.6615 / $2.2050 | Buy Now |
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DISTI #
SISS22DN-T1-GE3
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TTI | MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
|
$0.5950 / $0.6190 | Buy Now |
Part Details for SISS22DN-T1-GE3
SISS22DN-T1-GE3 CAD Models
SISS22DN-T1-GE3 Part Data Attributes
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SISS22DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SISS22DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Date Of Intro | 2018-08-19 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 31.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 90.6 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 29 pF | |
| JESD-30 Code | S-PDSO-N5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 65.7 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 52 ns | |
| Turn-on Time-Max (ton) | 36 ns |