Part Details for SISA04DN-T1-GE3 by Vishay Intertechnologies
Overview of SISA04DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SISA04DN-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
27AK1009
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Newark | N-Channel 30-V (D-S) Mosfet |Vishay SISA04DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1393 |
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$0.6730 / $1.2500 | Buy Now |
DISTI #
05W5778
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Newark | Mosfet, N-Ch, 30V, 40A, Powerpak 1212, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.2V Rohs Compliant: Yes |Vishay SISA04DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 9400 |
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$0.3830 | Buy Now |
DISTI #
SISA04DN-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA04DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.4860 / $0.6174 | Buy Now |
DISTI #
27AK1009
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Avnet Americas | Trans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R - Product that comes on tape, but is not reeled (Alt: 27AK1009) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 3 Days Container: Ammo Pack | 0 |
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$0.7340 / $1.2500 | Buy Now |
DISTI #
05W5778
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Avnet Americas | Trans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R - Bulk (Alt: 05W5778) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 620 Partner Stock |
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$0.8210 / $1.3300 | Buy Now |
DISTI #
78-SISA04DN-T1-GE3
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Mouser Electronics | MOSFET For New Design See: 78-SISHA04DN-T1-GE3 RoHS: Compliant | 40798 |
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$0.4500 / $1.2000 | Buy Now |
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Future Electronics | MOSFET 30V 2.15MOHM@10V 40A N-CH G-IV RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4550 / $0.4750 | Buy Now |
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Future Electronics | MOSFET 30V 2.15MOHM@10V 40A N-CH G-IV RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4550 / $0.4750 | Buy Now |
DISTI #
SISA04DN-T1-GE3
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TTI | MOSFET For New Design See: 78-SISHA04DN-T1-GE3 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 147000 In Stock |
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$0.4460 / $0.4810 | Buy Now |
DISTI #
SISA04DN-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 40A, Idm: 80A, 43W Min Qty: 1 | 0 |
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$0.6300 / $1.1500 | RFQ |
Part Details for SISA04DN-T1-GE3
SISA04DN-T1-GE3 CAD Models
SISA04DN-T1-GE3 Part Data Attributes:
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SISA04DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SISA04DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.00215 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-C5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 52 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Surface Mount | YES | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SISA04DN-T1-GE3
This table gives cross-reference parts and alternative options found for SISA04DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SISA04DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SIRA04DP-T1-GE3 | Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | SISA04DN-T1-GE3 vs SIRA04DP-T1-GE3 |