Datasheets
SISA04DN-T1-GE3 by:

Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8

Part Details for SISA04DN-T1-GE3 by Vishay Intertechnologies

Overview of SISA04DN-T1-GE3 by Vishay Intertechnologies

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

Price & Stock for SISA04DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 27AK1009
Newark N-Channel 30-V (D-S) Mosfet |Vishay SISA04DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1393
  • 1 $1.2500
  • 25 $1.0200
  • 50 $0.9070
  • 100 $0.7940
  • 250 $0.7330
  • 500 $0.6730
$0.6730 / $1.2500 Buy Now
DISTI # 05W5778
Newark Mosfet, N-Ch, 30V, 40A, Powerpak 1212, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.2V Rohs Compliant: Yes |Vishay SISA04DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 9400
  • 1 $0.3830
  • 25 $0.3830
  • 50 $0.3830
  • 100 $0.3830
  • 250 $0.3830
  • 500 $0.3830
$0.3830 Buy Now
DISTI # SISA04DN-T1-GE3
Avnet Americas Trans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA04DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.6174
  • 6,000 $0.5976
  • 12,000 $0.5778
  • 18,000 $0.5544
  • 24,000 $0.5364
  • 30,000 $0.5112
  • 300,000 $0.4860
$0.4860 / $0.6174 Buy Now
DISTI # 27AK1009
Avnet Americas Trans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R - Product that comes on tape, but is not reeled (Alt: 27AK1009) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 3 Days Container: Ammo Pack 0
  • 1 $1.2500
  • 25 $1.0200
  • 50 $0.9080
  • 100 $0.7950
  • 250 $0.7340
$0.7340 / $1.2500 Buy Now
DISTI # 05W5778
Avnet Americas Trans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R - Bulk (Alt: 05W5778) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 620 Partner Stock
  • 1 $1.3300
  • 25 $1.1000
  • 50 $0.9940
  • 100 $0.8810
  • 250 $0.8210
$0.8210 / $1.3300 Buy Now
DISTI # 78-SISA04DN-T1-GE3
Mouser Electronics MOSFET For New Design See: 78-SISHA04DN-T1-GE3 RoHS: Compliant 40798
  • 1 $1.2000
  • 10 $0.9810
  • 100 $0.7640
  • 500 $0.6480
  • 1,000 $0.5280
  • 3,000 $0.4860
  • 6,000 $0.4720
  • 9,000 $0.4500
$0.4500 / $1.2000 Buy Now
Future Electronics MOSFET 30V 2.15MOHM@10V 40A N-CH G-IV RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.4750
  • 6,000 $0.4650
  • 9,000 $0.4550
$0.4550 / $0.4750 Buy Now
Future Electronics MOSFET 30V 2.15MOHM@10V 40A N-CH G-IV RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.4750
  • 6,000 $0.4650
  • 9,000 $0.4550
$0.4550 / $0.4750 Buy Now
DISTI # SISA04DN-T1-GE3
TTI MOSFET For New Design See: 78-SISHA04DN-T1-GE3 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 147000
In Stock
  • 3,000 $0.4810
  • 6,000 $0.4670
  • 9,000 $0.4460
$0.4460 / $0.4810 Buy Now
DISTI # SISA04DN-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 40A, Idm: 80A, 43W Min Qty: 1 0
  • 1 $1.1500
  • 10 $0.9400
  • 50 $0.8100
  • 100 $0.7600
  • 250 $0.6800
  • 500 $0.6300
$0.6300 / $1.1500 RFQ
DISTI # SISA04DN-T1-GE3
Avnet Asia Trans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R (Alt: SISA04DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days 0
RFQ
DISTI # SISA04DN-T1-GE3
EBV Elektronik Trans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212 T/R (Alt: SISA04DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 40A 2.15m10V15A 2.2V250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS 5
  • 1 $1.3621
  • 10 $1.1780
  • 30 $1.0625
  • 100 $0.9441
  • 500 $0.8915
  • 1,000 $0.8681
$0.8681 / $1.3621 Buy Now
Sense Electronic Company Limited QFN 2997
RFQ

Part Details for SISA04DN-T1-GE3

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SISA04DN-T1-GE3 Part Data Attributes:

SISA04DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SISA04DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 20 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.00215 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-C5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 52 W
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount YES
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SISA04DN-T1-GE3

This table gives cross-reference parts and alternative options found for SISA04DN-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SISA04DN-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIRA04DP-T1-GE3 Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALEGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 Vishay Intertechnologies SISA04DN-T1-GE3 vs SIRA04DP-T1-GE3

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