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Part Details for SIS435DNT-T1-GE3 by Vishay Intertechnologies
Overview of SIS435DNT-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIS435DNT-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIS435DNT-T1-GE3
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Avnet Americas | Trans MOSFET P-CH -20V -22A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS435DNT-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.2700 / $0.3430 | Buy Now |
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DISTI #
78-SIS435DNT-T1-GE3
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Mouser Electronics | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T RoHS: Compliant | 3086 |
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$0.2860 / $0.7500 | Buy Now |
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Future Electronics | Single P-Channel 20 V 0.0140 Ohm 86 nC 3.7 W Silicon SMT Mosfet POWERPAK 12128 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2550 / $0.2700 | Buy Now |
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Future Electronics | Single P-Channel 20 V 0.0140 Ohm 86 nC 3.7 W Silicon SMT Mosfet POWERPAK 12128 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.2550 / $0.2700 | Buy Now |
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DISTI #
SIS435DNT-T1-GE3
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TTI | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8T pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.2500 / $0.2720 | Buy Now |
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DISTI #
SIS435DNT-T1-GE3
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TME | Transistor: P-MOSFET, TrenchFET®, unipolar, -20V, -30A, Idm: -80A Min Qty: 1 | 0 |
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$0.3890 / $0.7770 | RFQ |
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DISTI #
SIS435DNT-T1-GE3
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EBV Elektronik | Trans MOSFET P-CH -20V -22A 8-Pin PowerPAK 1212 T/R (Alt: SIS435DNT-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIS435DNT-T1-GE3
SIS435DNT-T1-GE3 CAD Models
SIS435DNT-T1-GE3 Part Data Attributes:
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SIS435DNT-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIS435DNT-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 30A I(D), 20V, 0.0054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8T, POWERPAK-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, S-PDSO-C5 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0054 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-C5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |