Part Details for SIS402DN-T1-GE3 by Vishay Intertechnologies
Overview of SIS402DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SIS402DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
05X0472
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Newark | Mosfet, N-Ch, 30V, 35A, Powerpak 1212-8, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIS402DN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.1400 | Buy Now |
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DISTI #
16P3666
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Newark | N Channel Mosfet, 30V, 35A Powerpak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIS402DN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.7430 / $0.7580 | Buy Now |
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DISTI #
SIS402DN-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 19A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS402DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$0.5477 / $0.5823 | Buy Now |
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DISTI #
781-SIS402DN-T1-GE3
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Mouser Electronics | MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 11138 |
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$0.7430 / $1.8200 | Buy Now |
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DISTI #
E02:0323_00531473
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Arrow Electronics | Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 EP T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Date Code: 2349 | Europe - 3000 |
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$0.5532 / $0.5726 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.006 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.5550 / $0.5750 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.006 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel | 0Reel |
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$0.5550 / $0.5750 | Buy Now |
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DISTI #
76834071
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Verical | Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 EP T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2349 | Americas - 3000 |
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$0.5675 / $0.5874 | Buy Now |
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DISTI #
81016697
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Verical | Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 EP T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2407 | Americas - 3000 |
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$0.9060 | Buy Now |
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Bristol Electronics | 1090 |
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RFQ |
Part Details for SIS402DN-T1-GE3
SIS402DN-T1-GE3 CAD Models
SIS402DN-T1-GE3 Part Data Attributes
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SIS402DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIS402DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 35A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 61 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-XDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 5.2 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |