Part Details for SIRC10DP-T1-GE3 by Vishay Intertechnologies
Overview of SIRC10DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIRC10DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
15AC8638
|
Newark | Mosfet, N Ch+Schottky, 30V, Powerpak So, Transistor Polarity:N Channel + Schottky, Continuous Drain Current Id:60A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0029Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Rohs Compliant: Yes |Vishay SIRC10DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4590 |
|
$0.6280 / $0.9440 | Buy Now |
|
DISTI #
20AC3880
|
Newark | N-Channel 30-V (D-S) Mosfet W/Schott |Vishay SIRC10DP-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.3360 / $0.3440 | Buy Now |
|
DISTI #
SIRC10DP-T1-GE3
|
Avnet Americas | Transistor MOSFET N-CH 30V 60A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIRC10DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.3409 / $0.4330 | Buy Now |
|
DISTI #
78-SIRC10DP-T1-GE3
|
Mouser Electronics | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 6247 |
|
$0.3150 / $0.8400 | Buy Now |
|
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 | 0 |
|
$0.3370 | Buy Now |
|
|
Bristol Electronics | 3000 |
|
RFQ | ||
|
DISTI #
SIRC10DP-T1-GE3
|
TTI | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.3160 / $0.3350 | Buy Now |
|
DISTI #
SIRC10DP-T1-GE3
|
TME | Transistor: N-MOSFET + Schottky, TrenchFET®, unipolar, 30V, 60A Min Qty: 1 | 0 |
|
$0.5220 / $0.7820 | RFQ |
|
DISTI #
SIRC10DP-T1-GE3
|
Avnet Asia | Transistor MOSFET N-CH 30V 60A 8-Pin PowerPAK SO (Alt: SIRC10DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days | 0 |
|
$0.4718 / $0.5315 | Buy Now |
|
DISTI #
SIRC10DP-T1-GE3
|
EBV Elektronik | Transistor MOSFET N-CH 30V 60A 8-Pin PowerPAK SO (Alt: SIRC10DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SIRC10DP-T1-GE3
SIRC10DP-T1-GE3 CAD Models
SIRC10DP-T1-GE3 Part Data Attributes:
|
|
SIRC10DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIRC10DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Date Of Intro | 2017-03-22 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11.25 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 52 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 48 ns | |
| Turn-on Time-Max (ton) | 80 ns |