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TRANSISTOR POWER, FET, FET General Purpose Power
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIRA14DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 58A PPAK SO-8 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
314 In Stock |
|
$0.2194 / $0.6600 | Buy Now |
DISTI #
70243888
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RS | Semiconcuctor, Mosfet, TrenchFET, N-Channel, 30V, 20A, 5.1mohm @ 10V, PowerPAK SO-8 | Siliconix / Vishay SIRA14DP-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.5600 / $0.6600 | RFQ |
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SIRA14DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIRA14DP-T1-GE3
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
|
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11.25 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 58 A | |
Drain-source On Resistance-Max | 0.0051 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 31.2 W | |
Pulsed Drain Current-Max (IDM) | 130 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SIRA14DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIRA14DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
TPH6R003NL | Nch VDSS≤30V | Toshiba America Electronic Components | SIRA14DP-T1-GE3 vs TPH6R003NL |
SSFD3004 | Power Field-Effect Transistor, 55A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, PLASTIC PACKAGE-3/2 | Suzhou Good-Ark Electronics Co Ltd | SIRA14DP-T1-GE3 vs SSFD3004 |