Part Details for SIRA10DP-T1-GE3 by Vishay Siliconix
Overview of SIRA10DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Security and Surveillance
Internet of Things (IoT)
Transportation and Logistics
Automotive
Robotics and Drones
Price & Stock for SIRA10DP-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIRA10DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 60A PPAK SO-8 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5590 In Stock |
|
$0.3757 / $1.0000 | Buy Now |
DISTI #
70243886
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RS | Semiconcuctor, Mosfet, TrenchFET, N-Channel, 30V, 30A, 3.7mohm @ 10V, PowerPAK SO-8 | Siliconix / Vishay SIRA10DP-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
|
$0.6500 / $0.7700 | RFQ |
Part Details for SIRA10DP-T1-GE3
SIRA10DP-T1-GE3 CAD Models
SIRA10DP-T1-GE3 Part Data Attributes:
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SIRA10DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIRA10DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 30A SO-8
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.0037 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIRA10DP-T1-GE3
This table gives cross-reference parts and alternative options found for SIRA10DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIRA10DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SIRA10DP-T1-GE3 | Power Field-Effect Transistor, 60A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Intertechnologies | SIRA10DP-T1-GE3 vs SIRA10DP-T1-GE3 |
SI7742DP-T1-GE3 | Power Field-Effect Transistor, 60A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SIRA10DP-T1-GE3 vs SI7742DP-T1-GE3 |