Part Details for SIR888DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR888DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for SIR888DP-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR888DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 25V 29A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR888DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$1.7550 / $2.2295 | Buy Now |
DISTI #
SIR888DP-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 25V 29A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR888DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$1.7550 / $2.2295 | Buy Now |
Part Details for SIR888DP-T1-GE3
SIR888DP-T1-GE3 CAD Models
SIR888DP-T1-GE3 Part Data Attributes:
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SIR888DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR888DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 40A I(D), 25V, 0.00325ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, R-PDSO-C5 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.00325 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-C5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 240 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 70 A | |
Surface Mount | YES | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |