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Part Details for SIR882DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR882DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIR882DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
86R3813
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Newark | Mosfet, N Ch, 100V, 60A, Powerpak So-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:83W Rohs Compliant: Yes |Vishay SIR882DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.0400 / $1.2400 | Buy Now |
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DISTI #
94T2661
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Newark | Mosfet, N Ch, 100V, 60A, Powerpak So-8, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.2V Rohs Compliant: Yes |Vishay SIR882DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.5100 | Buy Now |
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DISTI #
SIR882DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR882DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
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$1.0935 / $1.3892 | Buy Now |
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DISTI #
78-SIR882DP-T1-GE3
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Mouser Electronics | MOSFET 100 Volts 60 Amps 83 Watts RoHS: Compliant | 0 |
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$1.0800 / $2.4000 | Order Now |
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Future Electronics | SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$1.0600 | Buy Now |
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Future Electronics | SiR882DP Series 100 V 8.7 mOhm SMT N-Channel Mosfet - PowerPAK® SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$1.0600 | Buy Now |
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DISTI #
SIR882DP-T1-GE3
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TTI | MOSFET 100 Volts 60 Amps 83 Watts pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$1.3500 | Buy Now |
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DISTI #
SIR882DP-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR882DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
|
$1.0935 / $1.3892 | Buy Now |
|
DISTI #
SIR882DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 60A, Idm: 80A, 83W Min Qty: 3000 | 0 |
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$1.4300 | RFQ |
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DISTI #
SIR882DP-T1-GE3
|
EBV Elektronik | Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R (Alt: SIR882DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 39 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIR882DP-T1-GE3
SIR882DP-T1-GE3 CAD Models
SIR882DP-T1-GE3 Part Data Attributes:
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SIR882DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR882DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 60A I(D), 100V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0087 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 83 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIR882DP-T1-GE3
This table gives cross-reference parts and alternative options found for SIR882DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR882DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIR882DP-T1-GE3 | TRANSISTOR 60 A, 100 V, 0.0087 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power | Vishay Siliconix | SIR882DP-T1-GE3 vs SIR882DP-T1-GE3 |
| TPH8R80ANH | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | SIR882DP-T1-GE3 vs TPH8R80ANH |