Datasheets
SIR846DP-T1-GE3 by:

TRANSISTOR 20 A, 100 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power

Part Details for SIR846DP-T1-GE3 by Vishay Siliconix

Overview of SIR846DP-T1-GE3 by Vishay Siliconix

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Applications Space Technology Aerospace and Defense Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Price & Stock for SIR846DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIR846DP-T1-GE3CT-ND
DigiKey MOSFET N-CH 100V 60A PPAK SO-8 Min Qty: 1 Lead time: 46 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2980
In Stock
  • 1 $2.4100
  • 10 $2.0040
  • 100 $1.5953
  • 500 $1.3499
  • 1,000 $1.1453
  • 3,000 $1.0881
  • 6,000 $1.0472
  • 9,000 $1.0125
$1.0125 / $2.4100 Buy Now

Part Details for SIR846DP-T1-GE3

SIR846DP-T1-GE3 CAD Models

SIR846DP-T1-GE3 Part Data Attributes:

SIR846DP-T1-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SIR846DP-T1-GE3 Vishay Siliconix TRANSISTOR 20 A, 100 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-XDSO-C5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 61 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.0078 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIR846DP-T1-GE3

This table gives cross-reference parts and alternative options found for SIR846DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR846DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
EPC2801 Power Field-Effect Transistor, 25A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE, DIE-11 Efficient Power Conversion SIR846DP-T1-GE3 vs EPC2801

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