Part Details for SIR800ADP-T1-GE3 by Vishay Intertechnologies
Results Overview of SIR800ADP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Smart Cities
SIR800ADP-T1-GE3 Information
SIR800ADP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SIR800ADP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
99AC9576
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Newark | Mosfet, N-Ch, 177A, 20V, Powerpak So, Transistor Polarity:N Channel, Continuous Drain Current Id:1... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 8216 |
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$1.1500 / $2.4600 | Buy Now |
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DISTI #
SIR800ADP-T1-GE3
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Avnet Americas | N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIR800ADP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.5880 / $0.6250 | Buy Now |
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DISTI #
78-SIR800ADP-T1-GE3
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Mouser Electronics | MOSFETs 20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant | 1060 |
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$0.6250 / $1.7400 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks | 0 |
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$0.6500 | Buy Now |
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DISTI #
SIR800ADP-T1-GE3
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TTI | MOSFETs 20V Vds 12V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.6100 / $0.6600 | Buy Now |
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DISTI #
SIR800ADP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 20V, 177A, Idm: 150A Min Qty: 3000 | 0 |
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$1.0300 | RFQ |
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DISTI #
SIR800ADP-T1-GE3
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EBV Elektronik | NCHANNEL 20V DS MOSFET (Alt: SIR800ADP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIR800ADP-T1-GE3
SIR800ADP-T1-GE3 CAD Models
SIR800ADP-T1-GE3 Part Data Attributes
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SIR800ADP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SIR800ADP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Date Of Intro | 2018-07-08 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 177 A | |
| Drain-source On Resistance-Max | 0.0046 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 72 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 62.5 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 78 ns | |
| Turn-on Time-Max (ton) | 34 ns |