Datasheets
SIR622DP-T1-GE3 by:
Vishay Intertechnologies
Vishay Huntington
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor,

Part Details for SIR622DP-T1-GE3 by Vishay Intertechnologies

Overview of SIR622DP-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SIR622DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 20AC3889
Newark N-Channel 150-V (D-S) Mosfet |Vishay SIR622DP-T1-GE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.8820
  • 1,000 $0.8480
  • 2,000 $0.7700
  • 4,000 $0.6910
  • 6,000 $0.6670
  • 10,000 $0.6520
$0.6520 / $0.8820 Buy Now
DISTI # 26AK9906
Newark N-Channel 150-V (D-S) Mosfet |Vishay SIR622DP-T1-GE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $1.6300
  • 10 $1.3400
  • 25 $1.2400
  • 50 $1.1400
  • 100 $1.0400
$1.0400 / $1.6300 Buy Now
DISTI # SIR622DP-T1-GE3
Avnet Americas N-CHANNEL 150-V (D-S) MOSFET - Tape and Reel (Alt: SIR622DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.6450
  • 12,000 $0.6027
  • 18,000 $0.5932
  • 30,000 $0.5833
  • 60,000 $0.5765
$0.5765 / $0.6450 Buy Now
DISTI # 78-SIR622DP-T1-GE3
Mouser Electronics MOSFETs 150V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 4020
  • 1 $1.8700
  • 10 $1.2900
  • 100 $0.9580
  • 500 $0.7780
  • 1,000 $0.7090
  • 3,000 $0.6340
  • 6,000 $0.6120
$0.6120 / $1.8700 Buy Now
DISTI # V36:1790_17597409
Arrow Electronics Trans MOSFET N-CH 150V 51.6A 8-Pin PowerPAK SO EP T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks Date Code: 2437 Americas - 3000
  • 3,000 $0.6324
  • 6,000 $0.6108
$0.6108 / $0.6324 Buy Now
Future Electronics N-Channel 150 V (D-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 3,000 $0.6150
  • 6,000 $0.5950
$0.5950 / $0.6150 Buy Now
Future Electronics N-Channel 150 V (D-S) MOSFET RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.6150
  • 6,000 $0.5950
$0.5950 / $0.6150 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 3,000 $0.6450
  • 6,000 $0.6200
$0.6200 / $0.6450 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 3,000 $0.6450
  • 6,000 $0.6200
$0.6200 / $0.6450 Buy Now
DISTI # 84949899
Verical Trans MOSFET N-CH 150V 51.6A 8-Pin PowerPAK SO EP T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2437 Americas - 3000
  • 3,000 $0.6324
  • 6,000 $0.6108
$0.6108 / $0.6324 Buy Now
DISTI # SIR622DP-T1-GE3
TTI MOSFETs 150V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 18000
In Stock
  • 3,000 $0.6130
$0.6130 Buy Now
DISTI # SIR622DP-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 150V, 51.6A, Idm: 100A Min Qty: 3000 0
  • 3,000 $0.9300
$0.9300 RFQ
DISTI # SIR622DP-T1-GE3
Avnet Asia N-CHANNEL 150-V (D-S) MOSFET (Alt: SIR622DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days 0
  • 6,000 $1.0517
  • 12,000 $1.0371
  • 18,000 $1.0229
  • 30,000 $1.0091
  • 60,000 $0.9825
  • 150,000 $0.9573
  • 300,000 $0.9334
$0.9334 / $1.0517 Buy Now
DISTI # SIR622DP-T1-GE3
EBV Elektronik N-CHANNEL 150-V (D-S) MOSFET (Alt: SIR622DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIR622DP-T1-GE3

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SIR622DP-T1-GE3 Part Data Attributes

SIR622DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
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SIR622DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
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Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Date Of Intro 2016-07-19
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 80 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 51.6 A
Drain-source On Resistance-Max 0.0177 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 100 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIR622DP-T1-GE3

This table gives cross-reference parts and alternative options found for SIR622DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR622DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SIDR622DP-T1-GE3 Vishay Intertechnologies $2.2475 Power Field-Effect Transistor, 56.7A I(D), 150V, 0.0177ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8DC, 8 PIN SIR622DP-T1-GE3 vs SIDR622DP-T1-GE3

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