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Part Details for SIR616DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR616DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| TLK106RHBR | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| TLK106RHBT | Texas Instruments | Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver 32-VQFN 0 to 0 | |
| SN65LVCP1414RLJT | Texas Instruments | 14.2-GBPS Quad Channel, Dual Mode Linear Equalizer 38-WQFN -40 to 85 |
Price & Stock for SIR616DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
57AJ0402
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Newark | Mosfet, N-Ch, 200V, 20.2A, Powerpak So Rohs Compliant: Yes |Vishay SIR616DP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5985 |
|
$1.0200 / $1.5400 | Buy Now |
|
DISTI #
20AC3887
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Newark | N-Channel 200V (D-S) Mosfet Rohs Compliant: Yes |Vishay SIR616DP-T1-GE3 RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.5700 / $0.5820 | Buy Now |
|
DISTI #
SIR616DP-T1-GE3
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Avnet Americas | N-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SIR616DP-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
|
$0.5035 / $0.5378 | Buy Now |
|
DISTI #
78-SIR616DP-T1-GE3
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Mouser Electronics | MOSFETs 200V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 6000 |
|
$0.5470 / $1.6500 | Buy Now |
|
DISTI #
E02:0323_10980328
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Arrow Electronics | Trans MOSFET N-CH 200V 6.2A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 Lead time: 26 Weeks Date Code: 2437 | Europe - 6000 |
|
$0.6617 | Buy Now |
|
DISTI #
V72:2272_17597352
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Arrow Electronics | Trans MOSFET N-CH 200V 6.2A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Date Code: 2426 Container: Cut Strips | Americas - 5250 |
|
$0.5488 / $1.3440 | Buy Now |
|
|
Future Electronics | N-Channel 200 V 50.5 mOhm 52 W ThunderFET Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks Container: Reel | 18000Reel |
|
$0.5150 / $0.5350 | Buy Now |
|
|
Future Electronics | N-Channel 200 V 50.5 mOhm 52 W ThunderFET Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks Container: Cut Tape/Mini-Reel | 15Cut Tape/Mini-Reel |
|
$0.5550 / $0.7500 | Buy Now |
|
|
Future Electronics | N-Channel 200 V 50.5 mOhm 52 W ThunderFET Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.5150 / $0.5350 | Buy Now |
|
DISTI #
85557265
|
Verical | Trans MOSFET N-CH 200V 6.2A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 6000 Package Multiple: 6000 Date Code: 2437 | Americas - 6000 |
|
$0.6574 | Buy Now |
Part Details for SIR616DP-T1-GE3
SIR616DP-T1-GE3 CAD Models
SIR616DP-T1-GE3 Part Data Attributes
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SIR616DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR616DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Date Of Intro | 2016-07-19 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 20.2 A | |
| Drain-source On Resistance-Max | 0.0535 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 9 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 52 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 50 ns | |
| Turn-on Time-Max (ton) | 56 ns |