Datasheets
SIR510DP-T1-RE3 by:

Power Field-Effect Transistor,

Part Details for SIR510DP-T1-RE3 by Vishay Intertechnologies

Overview of SIR510DP-T1-RE3 by Vishay Intertechnologies

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Price & Stock for SIR510DP-T1-RE3

Part # Distributor Description Stock Price Buy
DISTI # 31AJ7243
Newark Mosfet, N-Ch, 100V, 126A, Powerpak So Rohs Compliant: Yes |Vishay SIR510DP-T1-RE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 16395
  • 1 $2.2800
  • 10 $2.0600
  • 25 $1.9300
  • 50 $1.8000
  • 100 $1.6700
  • 250 $1.6100
$1.6100 / $2.2800 Buy Now
DISTI # 86AK6231
Newark Mosfet, N-Ch, 100V, 126A, Powerpak So Rohs Compliant: Yes |Vishay SIR510DP-T1-RE3 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 3,000 $1.1800
  • 6,000 $1.1600
  • 12,000 $1.1300
$1.1300 / $1.1800 Buy Now
DISTI # SIR510DP-T1-RE3
Avnet Americas Transistor MOSFET N-Channel 100V 126A 8-Pin PowerSOIC T/R - Tape and Reel (Alt: SIR510DP-T1-RE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.3148
$1.3148 Buy Now
DISTI # 78-SIR510DP-T1-RE3
Mouser Electronics MOSFET N-CHANNEL 100-V (D-S) RoHS: Compliant 12448
  • 1 $2.0100
  • 10 $1.8000
  • 100 $1.4300
  • 250 $1.3700
  • 500 $1.2100
  • 1,000 $1.0300
  • 3,000 $0.9730
  • 6,000 $0.9370
$0.9370 / $2.0100 Buy Now
DISTI # V72:2272_25567646
Arrow Electronics Trans MOSFET N-CH 100V 31A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 44 Weeks Container: Cut Strips Americas - 1
  • 1 $0.9732
$0.9732 Buy Now
Future Electronics N-Channel 100 V (D-S) MOSFET ,PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks 0
  • 6,000 $0.9540
$0.9540 Buy Now
DISTI # SIR510DP-T1-RE3
TTI MOSFET N-CHANNEL 100-V (D-S) RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel Americas - 0
  • 6,000 $0.9300
  • 9,000 $0.9000
$0.9000 / $0.9300 Buy Now
DISTI # SIR510DP-T1-RE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 126A, Idm: 300A Min Qty: 3000 0
  • 3,000 $1.3000
$1.3000 RFQ
CHIPMALL.COM LIMITED 100V 3.6m@20A,10V 4V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS 2957
  • 1 $2.5946
  • 10 $2.2263
  • 30 $1.9968
  • 100 $1.7601
  • 500 $1.6532
  • 1,000 $1.6070
$1.6070 / $2.5946 Buy Now
DISTI # SIR510DP-T1-RE3
EBV Elektronik Transistor MOSFET N-Channel 100V 126A 8-Pin PowerSOIC T/R (Alt: SIR510DP-T1-RE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 33 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIR510DP-T1-RE3

SIR510DP-T1-RE3 CAD Models

SIR510DP-T1-RE3 Part Data Attributes

SIR510DP-T1-RE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIR510DP-T1-RE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 38 Weeks
Date Of Intro 2020-09-02
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 101 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 126 A
Drain-source On Resistance-Max 0.0042 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 11 pF
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 300 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 74 ns
Turn-on Time-Max (ton) 58 ns

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