Datasheets
SIR186DP-T1-RE3 by:

Power Field-Effect Transistor,

Part Details for SIR186DP-T1-RE3 by Vishay Intertechnologies

Overview of SIR186DP-T1-RE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SIR186DP-T1-RE3

Part # Distributor Description Stock Price Buy
DISTI # 26AK9904
Newark N-Channel 60-V (D-S) Mosfet |Vishay SIR186DP-T1-RE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 6000
  • 1 $1.2500
  • 25 $1.0300
  • 50 $0.9180
  • 100 $0.8040
  • 250 $0.7430
$0.7430 / $1.2500 Buy Now
DISTI # 37AC0918
Newark Mosfet, N-Ch, 60V, 60A, 150Deg C, 57W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.6V Rohs Compliant: Yes |Vishay SIR186DP-T1-RE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 10604
  • 1 $0.4390
  • 25 $0.4390
  • 50 $0.4390
  • 100 $0.4390
  • 250 $0.4390
$0.4390 Buy Now
DISTI # 59AC7438
Newark N-Channel 60-V (D-S) Mosfet |Vishay SIR186DP-T1-RE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 6,000 $0.4960
  • 10,000 $0.4850
$0.4850 / $0.4960 Buy Now
DISTI # SIR186DP-T1-RE3
Avnet Americas Transistor MOSFET N-CH 60V 60A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIR186DP-T1-RE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.6610
$0.6610 Buy Now
DISTI # 37AC0918
Avnet Americas Transistor MOSFET N-CH 60V 60A 8-Pin PowerPAK SO - Product that comes on tape, but is not reeled (Alt: 37AC0918) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 2671 Partner Stock
  • 1 $1.3400
  • 25 $1.1300
  • 50 $1.0200
  • 100 $0.9030
  • 250 $0.8410
$0.8410 / $1.3400 Buy Now
DISTI # 26AK9904
Avnet Americas Transistor MOSFET N-CH 60V 60A 8-Pin PowerPAK SO - Product that comes on tape, but is not reeled (Alt: 26AK9904) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 6000 Partner Stock
  • 1 $1.2500
  • 25 $1.0300
  • 50 $0.9180
  • 100 $0.8040
  • 250 $0.7430
$0.7430 / $1.2500 Buy Now
DISTI # 78-SIR186DP-T1-RE3
Mouser Electronics MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 15968
  • 1 $1.2100
  • 10 $0.9940
  • 100 $0.7740
  • 500 $0.6560
  • 1,000 $0.5340
  • 3,000 $0.5020
  • 6,000 $0.4780
  • 9,000 $0.4560
$0.4560 / $1.2100 Buy Now
Future Electronics MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Non Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 0
  • 6,000 $0.4860
$0.4860 Buy Now
DISTI # SIR186DP-T1-RE3
TTI MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel Americas - 0
  • 6,000 $0.4650
  • 9,000 $0.4560
$0.4560 / $0.4650 Buy Now
DISTI # SIR186DP-T1-RE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 60V, 60A, Idm: 150A, 57W Min Qty: 3000 0
  • 3,000 $0.6900
$0.6900 RFQ
DISTI # SIR186DP-T1-RE3
Avnet Asia Transistor MOSFET N-CH 60V 60A 8-Pin PowerPAK SO (Alt: SIR186DP-T1-RE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 48 Weeks, 0 Days 0
RFQ
DISTI # SIR186DP-T1-RE3
EBV Elektronik Transistor MOSFET N-CH 60V 60A 8-Pin PowerPAK SO (Alt: SIR186DP-T1-RE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIR186DP-T1-RE3

SIR186DP-T1-RE3 CAD Models

SIR186DP-T1-RE3 Part Data Attributes:

SIR186DP-T1-RE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIR186DP-T1-RE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOP-8
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 31.25 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 29 pF
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 57 W
Pulsed Drain Current-Max (IDM) 150 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 46 ns
Turn-on Time-Max (ton) 64 ns

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