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Power Field-Effect Transistor, 40A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86R3802
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Newark | N-Channel 30-V (D-S) Mosfet |Vishay SIR166DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5750 / $0.6790 | Buy Now |
DISTI #
SIR166DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR166DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.5832 / $0.7409 | Buy Now |
DISTI #
781-SIR166DP-T1-GE3
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Mouser Electronics | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 1473 |
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$0.5400 / $1.4400 | Buy Now |
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Future Electronics | SiR166DP Series N-Channel 30 V 0.0040 Ohm 48 W SMT Mosfet - PowerPAK® SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5400 / $0.5600 | Buy Now |
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Future Electronics | SiR166DP Series N-Channel 30 V 0.0040 Ohm 48 W SMT Mosfet - PowerPAK® SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5400 / $0.5600 | Buy Now |
DISTI #
SIR166DP-T1-GE3
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TTI | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
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$0.5400 / $0.5690 | Buy Now |
DISTI #
SIR166DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 40A, Idm: 70A, 48W Min Qty: 3000 | 0 |
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$0.8700 | RFQ |
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Chip 1 Exchange | INSTOCK | 2578 |
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RFQ | |
DISTI #
SIR166DP-T1-GE3
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EBV Elektronik | Trans MOSFET N-CH 30V 29.5A 8-Pin PowerPAK SO T/R (Alt: SIR166DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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SIR166DP-T1-GE3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SIR166DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 40A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.0032 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 70 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SIR166DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR166DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSC059N04LSGATMA1 | Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | SIR166DP-T1-GE3 vs BSC059N04LSGATMA1 |
BSC520N15NS3G | Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | SIR166DP-T1-GE3 vs BSC520N15NS3G |
SIR862DP-T1-GE3 | Power Field-Effect Transistor, 50A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR166DP-T1-GE3 vs SIR862DP-T1-GE3 |
BSC059N04LSG | Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | SIR166DP-T1-GE3 vs BSC059N04LSG |
SIR880DP-T1-GE3 | Power Field-Effect Transistor, 60A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR166DP-T1-GE3 vs SIR880DP-T1-GE3 |
BSC093N04LSG | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 | Infineon Technologies AG | SIR166DP-T1-GE3 vs BSC093N04LSG |
SI7738DP-T1-E3 | Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR166DP-T1-GE3 vs SI7738DP-T1-E3 |
SIR804DP-T1-GE3 | Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR166DP-T1-GE3 vs SIR804DP-T1-GE3 |
SIR426DP-T1-GE3 | Power Field-Effect Transistor, 30A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR166DP-T1-GE3 vs SIR426DP-T1-GE3 |
BSC093N04LSGATMA1 | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 | Infineon Technologies AG | SIR166DP-T1-GE3 vs BSC093N04LSGATMA1 |